【Epitaxy Papers】Effect of substrate orientation on homoepitaxial β-Ga₂O₃ films grown by HVPE

      Researchers from the Ioffe Institute have published a dissertation titled "Effect of substrate orientation on homoepitaxial β-Ga₂O₃ films grown by HVPE" in Materialia.

Abstract

      Gallium oxide is a promising ultra-wide bandgap (UWBG) transparent oxide semiconductor. It is currently being intensively tested for power electronics devices. Epitaxial growth is mainly utilized for their fabrication. The substrate orientation plays a key role in this process, since the monoclinic low symmetrical gallium oxide phase is highly anisotropic in its physical properties. We report homoepitaxial β-Ga₂O₃ layers, that were grown by HVPE on the native substrates of the (100) and the (-201) orientations for the first time. The structural properties of these films are compared with the ones grown on conventional (010) oriented substrates. Acquired layers are single-phase and monocrystalline, but they differ significantly in crystal perfection, homogeneity of chemical composition and surface roughness. The highest growth rate has been achieved on the (-201) plane, which demonstrates the potential of this orientation in device structures.

DOI：

https://doi.org/10.1016/j.mtla.2025.102415