【Member News】The First Production Plant of "Tanoxi Technology" Has been Put into Use in Nansha, Empowering the Semiconductor Materials Industry Cluster in the Bay Area

      The production plant, located in Nansha, Guangzhou, the "Golden Bay" of the Guangdong-Hong Kong-Macao Greater Bay Area, covers an area of about 500 square meters and integrates R&D, testing, manufacturing and process support. The MOCVD process area, ion implantation room, dedicated gas storage room, and solid waste treatment room are all set up to ensure the stability and safety of high-tech product manufacturing.

      Gallium Oxide (Ga₂O₃), as a semiconductor material with an ultra-wide band gap, shows great application potential in fields such as high-voltage power electronics, radio frequency communication, and photoelectric detection. Founded by Professor Tan Chee Keong from the Hong Kong University of Science and Technology (Guangzhou) and his doctoral students, Tanoxi Technology focuses on the preparation of Gallium Oxide epitaxial films and the development of high-performance semiconductor devices. It is the world's only enterprise that has achieved stable P-type conductive Gallium Oxide epitaxial layers through the MOCVD process, filling the long-standing gap in P-type conductivity in the Gallium Oxide material system.

      Professor Tan Chee Keong stated: " We have solved the pain point of p-type conductivity that has existed in the field of Gallium Oxide for 20 years, unlocked the bipolar device capabilities of Gallium Oxide, and reconfigured the industrial chain ecosystem of Gallium Oxide. The market size has increased by at least tenfold, transforming a market of hundreds of billions of yuan into one of several hundred million yuan."

      The team successfully transformed the MOCVD process production equipment, which is operating well in the factory building, achieving a deep compatibility between the equipment platform and Gallium Oxide materials, providing a sustainable technical support platform for the localized production and application of fourth-generation semiconductor materials.

      By achieving P-type conductivity, Tanoxi Technology has enabled Gallium Oxide materials to have the ability to construct p-n junctions and other bipolar devices (such as BJT, IGBT), significantly expanding the application space in fields such as new energy vehicles, industrial robots, and power energy. The team has developed a unique global technology system by using its own MOCVD epitaxy and processing technology, which supports multi-layer pn structure design to achieve differentiated device performance. The process is compatible with semiconductor industry standard equipment and is feasible for mass production and high industrialization, providing solid support for wafer processing and chip integration.

Epitaxial wafer samples prepared by Tanoxi Technology

      In 2022, Tanoxi Technology was selected into the "Technology Seeding Programme Team" of the Ho Ying Dong Institute and moved into the Guangdong-Hong Kong-Macao (International) Youth Innovation Workshop. In its early days, the Ho Ying Dong Research Institute provided it with crucial financial support and a favorable incubation environment, support the project to quickly form a team. The Hong Kong University of Science and Technology (Guangzhou) actively promoted the participation of Tanoxi Technology in entrepreneurship competitions and roadshows to increase the project's exposure and popularity in the Greater Bay Area, and helped the team connect to the capital market and link to high-quality investor resources including Lihua Science and Technology. Thanks to the collaborative efforts of the Ho Ying Dong Institute and HKUST Guangzhou, Tanoxi Technology successfully completed a multimillion-dollar angel round of financing in 2024. The funds were mainly used to introduce advanced equipment and increase the capacity of the MOCVD technology route to meet the rapidly growing market demand.

      In the future, Tanoxi Technology will take the establishment of its factory as a starting point, and join hands with partners from the upstream and downstream of the industrial chain to accelerate the transformation process of domestic new materials from "manufacturable" to "usable" and then to "mass-producible", support China achieve technological independence and global leadership in the field of fourth-generation semiconductor materials.

Company Profile

      Since its establishment in Nansha, Guangzhou in 2022, Guangzhou Tanoxi Technology Co., Ltd. has been led by Professor Tan Chee Keong as the core, along with a team of elite doctoral talents from the Hong Kong University of Science and Technology (Guangzhou). All team members graduated from globally renowned universities such as The Chinese University of Hong Kong and Pennsylvania State University. The company focuses on the preparation of Gallium Oxide epitaxial films and the development of high-performance semiconductor devices. Relying on the technology and research platform of the Hong Kong University of Science and Technology (Guangzhou), it is committed to promoting the application of Gallium Oxide in the next generation of semiconductor technologies. Through continuous technological innovation and research and development, Tanoxi Technology provides high-quality epitaxial growth services and device structure design and fabrication services for downstream industries. Their products cover Gallium Oxide films of various phases, striving to lead the new direction of future technological development.