【Member News】Fujia GalliumMOCVD-Grown Gallium OxideHomoepitaxial Films Reach New Highin Performance

      Recently, Hangzhou Fujia Gallium Technology Co., LTD. (hereinafter referred to as: Fujia Gallium) has once again made a breakthrough in the Gallium Oxide MOCVD homogeneous epitaxial technology. Tests conducted by the national authoritative testing institution - National Institute of Metrology, China, show that the carrier concentration of Gallium Oxide homogeneous epitaxial wafer with a thickness exceeding 10μm is 4.2E16 cm^-3, and the mobility reaches 181.6 cm²/V·s. The successful development of high-quality Gallium Oxide homogeneous epitaxial wafer based on MOCVD technology will effectively support the rapid implementation of the Gallium Oxide high-voltage and high-power power electronic device industry.

      In March 2025, Fujia Gallium, based on its independently produced Gallium Oxide substrate products, achieved a major technological breakthrough by using MOCVD technology, with the migration rate of Gallium Oxide homogeneous epitaxial wafer with a thickness of over 10μm reaching 172.7 cm²/V; Based on this, researchers further optimized the control of background impurities during the MOCVD epitaxy process, precisely regulated the doping concentration, and improved the quality of Gallium Oxide homogeneous epitaxy films. The relevant standardized epitaxial products (specification sheets as follows) were launched simultaneously in June 2025, better serving Gallium Oxide device manufacturers and downstream users.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, Gallium Oxide crystal growth and processing equipment. The products mainly serve the fields of power devices, microwave and radio frequency, and optoelectronic detection.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M); It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").