【International Papers】Thermal Management Takes Center Stage in Next-Gen Electronics, New Review Finds

      As next-generation electronics push the limits of power, frequency, and operating environments, a new review published in Advanced Physics Research underscores the critical role of thermal management in ultrawide bandgap (UWBG) semiconductors such as β-Ga₂O₃, AlN, and diamond.

      Authored by Hassan Irshad Bhatti and Xiaohang Li of King Abdullah University of Science and Technology (KAUST) Saudi Arabia, the comprehensive study surveys the latest advances in thermal characterization techniques that diagnose and mitigate self-heating challenges in these high-performance materials. Optical methods like thermoreflectance imaging and Raman thermometry are compared alongside electrical techniques such as gate resistance thermometry and on-chip micro-thin film thermocouples.

      The review highlights the urgent need for accurate, spatially resolved thermal measurements as devices based on UWBG materials face intense heat loads and thermal bottlenecks. These insights are not only essential for ensuring reliability in power electronics and RF systems but also pave the way for future quantum technologies and deep-UV photonics.

      With the rising demand for compact, efficient, and rugged electronics, the authors argue that thermal metrology is no longer just diagnostic—it is central to the design and deployment of next-gen semiconductor systems.