【Device Papers】First Observations and Physical Insights of the Dynamic Breakdown Voltage and Overvoltage Margin Under Pulsed Conditions in β-Ga₂O₃ Based Devices

      Researchers from the Indian Institute of Science have published a dissertation titled "First Observations and Physical Insights of the Dynamic Breakdown Voltage and Overvoltage Margin Under Pulsed Conditions in β-Ga₂O₃ Based Devices" in 2025 IEEE International Reliability Physics Symposium (IRPS).

Abstract

      In this work, for the first time, we report transient breakdown voltage of on-wafer β-Ga₂O₃ Schottky barrier diodes (SBDs) in ultra-short (sub-µs duration) pulses based on an electrostatic discharge system setup. β-Ga₂O₃ SBDs show a dynamic breakdown of 626 V in 10 ns pulse excitations, 320 V higher than the static breakdown. The device can withstand overvoltage pulse stresses for varying number of switching cycles at pulse durations below 100 ns. Detailed experimental analysis reveals the role of trap states and trapping-induced temporal and spatial field evolution in the observed device behavior.

DOI：

https://doi.org/10.1109/IRPS48204.2025.10983578