【Device Papers】The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode

      Researchers from the Xiamen University of Technology have published a dissertation titled "The Achievement of Pulse Laser Deposited Amorphous P-Type N-Doped Ga₂O₃ for Applying in Thin Film Transistor and Homojunction Diode" in IEEE Transactions on Device and Materials Reliability.

Abstract

      In this study, an amorphous p-type N-doped Ga₂O₃ thin film has been achieved using pulsed laser deposition and Ga₂O₃:GaN=1:1 (at%) mixed ceramic target. The bonding states of the films after nitrogen incorporation were investigated using X-ray photoelectron spectroscopy, which revealed the lattice oxygen sites substituted by nitrogen. Ultraviolet photoelectron spectroscopy analysis shows a p-type feature of N-doped Ga₂O₃ film and a weak n-type unintentional doped pure Ga₂O₃ film. The thin film transistors have been fabricated using pure and N-doped Ga₂O₃ films to further confirm their n-type and p-type conductive properties, respectively. The N-doped Ga₂O₃-based TFTs displays p-type characteristics with a field effect mobility of 2.13×10^-3 cm²/V ⋅ s, an on/off ratio of 2.78×10⁴ and a sub-threshold swing of 0.15 V/dec. Finally, a full amorphous Ga₂O₃ films-based pn homojunction diode has been fulfilled and explored in detail, which displays a good rectifying characteristic with a rectification ratio of 1.46×10² and an ideality factor of 5.19.

DOI：

https://doi.org/10.1109/TDMR.2025.3559225