【Epitaxy Papers】The effects of sputtering powers on the structural, optical and electrical properties of β-Ga₂O₃ thin films prepared by magnetron sputtering

      Researchers from the Shanghai Dianji University have published a dissertation titled "The effects of sputtering powers on the structural, optical and electrical properties of β-Ga₂O₃ thin films prepared by magnetron sputtering" in Physica B: Condensed Matter.

Abstract

      β-Ga₂O₃ exhibits promising electrical properties and stability for power electronics and UV detectors, yet achieving effective p-type doping remains challenging. This study investigates Bi and Cu-doped β-Ga₂O₃ thin films grown via magnetron sputtering on sapphire, focusing on sputtering power effects post-annealing. Structural and optical analyses (X-ray diffraction, XRD; X-ray photoelectron spectroscopy, XPS; scanning electron microscopy, SEM; energy-dispersive spectroscopy, EDS; Raman spectroscopy, photoluminescence, and transmission spectroscopy) reveal a reduced bandgap from 4.97 eV to 3.80 eV after doping, aligning with theoretical predictions that Bi₂O₃ alloying elevates the valence band. Room-temperature photoluminescence identified two blue–green emission bands. Hall measurements confirmed weak p-type conductivity at the 1000 G field, with resistivity 1.49 × 10¹¹ Ω cm, Hall coefficient 4.22 × 10¹³ cm²/C, mobility 334.95 cm2V⁻¹s⁻¹, and carrier density 1.48 × 10⁵ cm⁻². These results advance p-type β-Ga₂O₃ research, demonstrating dual-acceptor doping as a viable pathway for modulating optoelectronic properties.

DOI：

https://doi.org/10.1016/j.physb.2025.417322