【Device Papers】Doping Enhanced Optoelectronic Properties of Ga₂O₃ Bridging One-Dimensional Nanostructures: From Nanowires to Nanobelts

      Researchers from the Shenyang University of Technology have published a dissertation titled "Doping Enhanced Optoelectronic Properties of Ga₂O₃ Bridging One-Dimensional Nanostructures: From Nanowires to Nanobelts" in Journal of Electronic Materials.

Abstract

      Ga₂O₃ is considered a promising semiconductor material for solar-blind photodetectors (SBPD) due to its ultra-wide bandgap (4.9 eV) and high chemical and thermal stability. One-dimensional (1D) nanostructures have stronger surface effects and can effectively improve photoconductivity performance. Doping is an effective method to improve the electrical and optoelectronic properties of Ga₂O₃ nanowires (NWs). However, there is limited research on the influence of doping on the morphology of NWs, especially the relationship between morphology and optoelectronic properties. In this work, morphological control of bridging 1D Ga₂O₃ nanostructures from NWs to nanobelts (NBs) was achieved by In doping. In doping can increase the lateral growth rate and broaden the diameter of NWs/NBs, improving the connectivity of bridging NWs and thus enhancing the absorption of light. Meanwhile, In doping can also reduce the bandgap of Ga₂O₃ NWs/NBs, and the lower In–O bond binding energy further promotes electron transport performance, obtaining a larger photocurrent (15.8 μA). The bridging device has a faster response speed (20 ms), which is due to the role of photosensitive NW–NW junction barrier in cross-bridged NWs. The bridging growth of 1D Ga₂O₃ nanostructures with controllable morphology provides an effective approach for the development of micro integrated high-performance photodetectors (PDs).

DOI：

https://doi.org/10.1007/s11664-025-12075-3