【Device Papers】E-Mode Vertical β-Ga₂O₃(010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers

      Researchers from the University at Buffalo SUNY have published a dissertation titled "E-Mode Vertical β-Ga₂O₃ (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers" in IEEE Electron Device Letters.

Abstract

      This work presents the fabrication and performance analysis of a novel enhancement-mode (E-mode) vertical β -Ga₂O₃ (010) U-trench MOSFET featuring an in-situ Mg-doped current blocking layer (CBL) for high-power applications. Utilizing metal-organic chemical vapor deposition (MOCVD), we achieved precise Mg doping of 1.3×10¹⁹ cm ^a−3 within the CBL to enhance current blocking capability while maintaining a robust threshold voltage of 5 V and a low on-state resistance of 5 m Ω .cm². The device achieved an on-current of 1.56 kA/cm² at V_GS=20 V and V_DS=40 V. The fabricated devices demonstrate a peak breakdown voltage of 101 V with an average breakdown field strength of up to 1.68 MV.cm⁻¹ . The calculated power device Figure of Merit is 2 MW.cm⁻² .

DOI：

https://doi.org/10.1109/LED.2025.3554401