【Epitaxy Papers】Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO₂/GaN Interface

      Researchers from the National Institute of Advanced Industrial Science and Technology have published a dissertation titled "Effect of Post-Deposition Annealing on Atomic Ordered Structure of Gallium Oxide Layer at SiO₂/GaN Interface" in physica status solidi (b).

Abstract

      The structural changes of the SiO₂/GaN interfacial gallium oxide layer as a function of the temperature of the post-deposition annealing are evaluated on an atomic scale by the photoelectron holography. Two types of SiO₂ deposition methods are used: atomic layer deposition and sputter deposition. In addition, the atomic arrangement of the native oxide layer on the GaN surface is also evaluated. Photoelectron holograms and scanning transmission electron microscope images show that the gallium oxide layer at the SiO₂/GaN interface is monatomic layer thick and have the same atomic arrangement as the native oxide film on the GaN substrate. From the analysis of hologram images, it is found that the ultrathin gallium oxide layer is damaged during sputter deposition of SiO₂, but the damage to the gallium oxide layer is recovered by annealing at 600 °C.

DOI：

https://doi.org/10.1002/pssb.202500025