【Specialist Intro】Pei Yanli —— the Member of Technical Expert Committee

Profile

Pei Yanli

Professor and doctoral advisor of School of Electronics and Information Engineering, Sun Yat-sen University

Director of Engineering Technology Research Center for Wide Band Gap Semiconductor Materials and Devices

  The Professor Pei Yanli’s main research work focuses on wide band gap oxide semiconductor materials and devices, including MOCVD equipment of oxide semiconductor material epitaxy, epitaxial process, power devices of oxide semiconductor , light detection devices of oxide semiconductor, thin film transistor devices oxide semiconductor , storage devices, neural morphology devices, etc.. She has published nearly 100 papers included in SCI, wrote chapters of two professional books, and authorized more than 30 invention patents. In 2020, she won the second prize of "Guangdong Science and Technology Progress Award". In 2021, the gallium oxide technology that she participated in research and development was listed in the leading technology list of "Science and Technology Innovation China" .

Achievements

  Professor Pei Yanli's academic expertise mainly includes basic research on semiconductor materials, equipment, processes as well as applications related to advanced devices, including MOCVD equipment and intelligent technology for oxides, transparent conductive oxide films and their applications in photoelectronic devices and displays, thin film transistor technology with high mobility oxide semiconductor , power devices based on gallium oxide, etc. In the direction of gallium oxide materials, the team carried out homogeneous and heterogeneous epitaxial research based on the self-developed MOCVD equipment dedicated to oxides, and established a high-quality gallium oxide epitaxial growth process based on multi-step and mixed sources methods; In terms of gallium oxide power devices, the team do researches on heterogeneous p-n junction, surface process and other technologies to improve the withstand voltage, device uniformity and yield.

Message from the expert

  Ultra wide band-gap semiconductor gallium oxide includes a variety of phase structures. Among them, the β, α、e phases are widely concerned, each with their own characteristics and advantages, and have significant application prospects in high voltage withstand, high power, RF, filtering, photoelectric detection and other fields. In the future, the team will be committed to developing the controlled epitaxial growth process and supporting equipment of gallium oxide single crystal materials, improving the performance of gallium oxide devices and expanding the new application field of gallium oxide.