【Specialist Intro】 Yu Hongyu —— the Member of Technical Expert Committee

Profile

  Yu Hongyu, currently the dean and professor of Shenzhen Hong Kong Institute of Microelectronics, mainly focuses on integrated circuit technology and devices, including CMOS, new ultra-high density memory, wide band-gap semiconductor device and system integration, and electronic ceramics. He has published nearly 440 academic papers, of which nearly 200 have been included in SCI, with a total number of other citations of nearly 5700. His H impact factor is 45. He has edited 2 books and wrote chapters of 4 professional books, and published/was granted nearly 21 US/European patents and more than 80 domestic patents. He has successfully set up the Shenzhen Hong Kong Institute of Microelectronics of South University of Science and Technology (approved by the Ministry of Education as a national demonstration microelectronics institute), the Engineering Research Center of the Ministry of Education for Future Communication Integrated Circuits, Guangdong GaN Device Engineering Technology Center, Guangdong Three Dimensional Integration Engineering Research Center and Shenzhen Third Generation Semiconductor Key Laboratory.

Achievement display

  Professor Yu Hongyu has been engaged in the research work in the field of microelectronic devices for more than 20 years. His academic expertise mainly includes the basic research on the key core materials, process technologies and advanced devices of microelectronics. Featured basic and application basic research work has been carried out in the direction of wide band-gap semiconductor power, RF and sensor devices, including ultra-low ohm process technology, p-GaN gate enhancement technology, stress engineering technology, in-situ passivation technology, etc. In addition, in the field of gallium oxide materials and devices, the team has achieved gallium oxide normally-off MOSFET devices, high voltage-withstand vertical SBDs, etc., and have established gallium oxide device simulation models and databases [IEEE EDTM, 6-21 April 2020]. The team also have carried out a series of studies to improve gallium oxide interface. Among them, by inserting an aluminum reaction layer at the Schottky interface of Ga₂O₃ diode, a stable ultra-low subthreshold swing has been achieved, and leakage has been reduced . The uniformity and yield of the device are improved, and a Gaussian model is established to analyze the interface results [IEEE TED, 68, 7, 2021].

Message from experts

  Gallium oxide（β- Ga₂O₃) is a typical representative of ultra wide-band-gap semiconductor, and is one of the ideal semiconductor materials for developing high-voltage resistance, high power and efficient energy-saving semiconductor devices. It has significant application prospects in power transmission and conversion, electric vehicles, high-speed rail and other fields. In recent years, gallium oxide semiconductor has become the international research hotpot of semiconductor and the commanding height of technology competition in great powers. The future development of the team will focus on the key issues that limit the performance of Ga₂O₃ devices, such as improving the voltage-withstand performance of devices, reducing the on-resistance, and achieving normally-off devices.