【Device Papers】High performance vacuum annealed β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃  HFET with fᴛ/fᴍᴀx of 32/65 GHz

      Researchers from the State University of New York have published a dissertation titled "High performance vacuum annealed β-(Al_xGa_1-x)₂O₃/Ga₂O₃ HFET with f_T/f_MAX of 32/65 GHz" in Applied Physics Express.

Abstract

      This letter reports (Al_xGa_1-x)₂O₃/Ga₂O₃ Heterostructure FET (HFET) with improved regrowth process and successful Al₂O₃ passivation. the high DC current 0.5 A/mm at 5V drain bias with 6.1 Ω.mm on resistance (R_ON) at V_GS=3V, peak transconductance (gm) of 110 mS/mm at room temperature (V_DS=15V) and around 0.8 A/mm peak I_ON at low temperature (100K). Peak f_T of 32 GHz and f_MAX of 65 GHz were extracted from RF measurements. The f_MAX is one of the highest for Ga₂O₃ based RF devices to the best of authors’ knowledge. The fT.LG product was estimated to be 6.1 GHz-µm.

DOI：

https://doi.org/10.35848/1882-0786/adeb43