【Device Papers】Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates with Ferroelectric AlScN Gate Stack

      Researchers from the Soongsil University have published a dissertation titled "Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates with Ferroelectric AlScN Gate Stack" in IEEE Electron Device Letters.

Abstract

      We present monolithic integrated, α-Ga₂O₃ reconfigurable NAND and NOR logic gates. Fabricated α-Ga₂O₃ field-effect transistors with a ferroelectric AlScN gate stack (FeFET) exhibit memory window of up to 5.5 V at V_DS = 1 V. Threshold voltage modulation of ~3.8 V is achieved via a program (10 V, 1 s) and erase pulse (-20 V, 1 s), respectively. Moreover, voltage transfer curves of the logic circuit as an inverter confirm hysteretic behaviors with a higher gain during a reverse sweep. Finally, reconfigurable logic operations are successfully demonstrated via two distinct input pulses and a source bias to the driver FeFET. The results demonstrate viability of monolithic integrated, compact Ga₂O₃ logic circuits.

DOI：

https://doi.org/10.1109/LED.2025.3584764