【Specialist Intro】Lu Xing —— the Member of Technical Expert Committee

Profile

  Lu Xing, who obtained his bachelor's degree and doctor's degree from Fudan University and Hong Kong University of Science and Technology respectively, is now an associate professor of the School of Electronics and Information Engineering of Sun Yat-sen University. He is mainly engaged in the research of wide band-gap semiconductor materials and devices. He has successively presided over or participated in many scientific research projects, including the National Natural Science Foundation of China, the National Key R&D Plan, the Natural Science Foundation of Guangdong Province, and the Guangdong Provincial Special Fund for Frontier and Key Technology Innovation; He published more than 40 papers that are included in SCI, and was cited nearly 800 times. He has been applied for/obtained more than 10 invention patents. He co-authored and published an English book related to compound semiconductor.

Achievements

  In recent years, Dr. Lu Xing has carried out a series of original research work around international cutting-edge topics in the field of gallium oxide semiconductor. Considering the limit that Ga₂O₃ materials are lack of p-doping, the research group proposed an innovative idea to build NiO/Ga₂O₃ heteropn p-n junction, developed the first high voltage withstand diode device based on NiO/Ga₂O₃ heteropn p-n junction, and proposed a new development route for future gallium oxide power electronic devices [IEEE EDL, 41, 3, 2020]. The research group can do heteroepitaxy ɛ-Ga₂O₃ single crystal film on sapphire, silicon carbide and silicon substrates by MOCVD method. It is the first to realize  the measurement of piezoelectric effect of ɛ-Ga₂O₃ materials and its application and preparation of SAW resonator parts of ɛ-Ga₂O₃ thin films [Adv. Sci., 2203927, 2022], and has developed the first heteroepitaxy of ɛ-Ga₂O₃ MOSFET devices [Appl. Surf. Sci., 603, 154440, 2022]. The related research achievements were listed in the "Science and Technology Innovation China Leading Technology List" in 2021.

Message from the expert

  Gallium oxide is the most promising new generation of power semiconductor materials after gallium nitride and silicon carbide. The research team will continue to carry out original basic researches and industrial technology research on cutting-edge issues in the field of gallium oxide power electronics.