【Member News】Fujia Gallium Secures Nearly RMB 100 Million in Series A+ Financing to Accelerate Industrialization of Fourth-Generation Semiconductor Materials

      Recently, Hangzhou Fujia Gallium Technology Co., Ltd. successfully completed its Series A+ financing round, raising nearly RMB 100 million. The round was jointly backed by well-known institutions including Shenzhen Capital Group, China Internet Investment Fund, Renzhi Capital, Zhongying Venture Capital, and Shengde International Investment. Previously, the company had already secured investments from leading organizations such as Wuchan Zhongda Group, Quzhou Xin'an Development, Lenovo Star, Zhejiang Innovation Development, and Hangzhou Institute of Optics and Fine Mechanics, highlighting its strong position and momentum in the next-generation semiconductor materials field.

      The funds will primarily be used to build China’s first 6-inch Gallium Oxide (Ga₂O₃) single-crystal and epitaxy production line, which is expected to reach an annual capacity of 10,000 wafers by the end of 2026. This will fill the domestic gap in large-scale supply of gallium oxide materials and provide critical support for supply chain independence. In addition, the financing will support efficiency improvements in single-crystal growth, epitaxy quality optimization, and device verification, laying a solid foundation for future product iterations and technological upgrades.

      As one of the most promising fourth-generation semiconductor materials, Gallium Oxide stands out for its ultra-wide bandgap and high critical breakdown field, showing great potential in high-power devices and extreme environment applications. It is especially promising in enabling high-voltage fast-charging technology for electric vehicles and supporting the evolution of power grid systems toward 10 kV and beyond, with the potential to significantly enhance energy conversion efficiency. However, challenges remain in crystal growth, substrate preparation, and large-size epitaxy. Since its founding, Fujia Gallium has been dedicated to Gallium Oxide R&D and industrialization, striving to establish a complete technology chain from crystal growth to epitaxy and advancing the transition of gallium oxide from the lab to large-scale application.

      Qi Hongji, founder of Fujia Gallium, stated: “Gallium oxide represents not only a major leap in the semiconductor materials system, but also a fundamental enabler for innovation in energy, communications, and national defense. Since our founding in 2019, we have focused on full-chain development of gallium oxide single-crystal growth and epitaxy technologies, addressing systemic challenges from technical innovation to industrial application. We pioneered the integration of artificial intelligence into crystal growth with our ‘one-click crystal growth’ intelligent equipment, launched a 10,000-wafer-scale substrate production line, and broke through high-performance homoepitaxy processes. These milestones not only fill domestic gaps in industrialization but also establish dual advantages in performance and efficiency on a global scale. Our achievements have been featured by CCTV-1, CCTV-2, People’s Daily, and China Securities Journal. Looking ahead, we will continue to drive technological iterations and capacity expansion, strengthen collaboration across industry, academia, and research, and contribute to building an independent and controllable ultra-wide bandgap semiconductor supply chain. Our goal is to secure China’s core voice in the global next-generation semiconductor landscape.”