【Specialist Intro】Luo Xiaorong —— the Member of Technical Expert Committee

Profile

  Professor Luo Xiaorong, a doctoral advisor, a candidate of National Talent Plan, a candidate of the New Century Excellent Talent Support Plan of the Ministry of Education,  is one of the top experts with outstanding contributions in Sichuan Province, who won Sichuan Youth Science and Technology Award.

  Professor Luo Xiaorong has been engaged in the research of power semiconductor devices and integrated technology for a long time. She is a fruitful researcher and won the second prize of the National Science and Technology Progress Award, the first prize of Sichuan Science and Technology Progress Award, the second prize of the Natural Science Award of the Ministry of Education, the second prize of Sichuan Technological Invention Award, the New Century Excellent Talent Support Plan of the Ministry of Education, and the Sichuan Youth Science and Technology Award. She presided over 40 projects including National Natural Science Foundation of China, some national major science and technology projects, some key research and development plans, and some provincial and ministerial projects; More than 100 of her articles have been published in SCI retrieval journals. She has published more than 40 papers in international authoritative journals such as IEEE TPE, IEEE EDL, IEEE TED, etc, as the first author or corresponding author, with her H-index 25; For 8 times, she has been invited to give reports on international academic conferences; She applied for more than 150 invention patents as the first inventor, authorized 6 US patents and more than 70 Chinese invention patents; She has published 4 monographs and textbooks.

  Professor Luo Xiaorong serves as the TPC member of ISPSD, which is the top international conference in this field; and she also is a member of IEEE EDS Power Devices and ICs Committee (one of the 15 technical committee members in the world), the co chairman of IEEE NMCI and the chairman of IEEE ICSICT branch, . She is also an expert on the evaluation of important scientific and technological projects of the National Natural Science Foundation of China and the Science and Technology Commission of the Military Commission.

  Professor Luo Xiaorong has been engaged in teaching, and has won the second prize for teaching achievements in the University of Electronic Science and Technology , Excellent Teaching Award for the undergraduate, and the Outstanding Style Award of the University of Electronic Science and Technology for "My Favorite Teacher". The laboratory of power semiconductor device and integration technology, which she works in, has cultivated more than 70 doctoral students and more than 1000 master students in the field of power semiconductor. It is the world's largest power semiconductor talent training base.

Achievements

  Ultra wide band gap semiconductor gallium oxide (Ga₂O₃) has a broad prospect in high-power and low-power applications, but the withstand voltage of Ga₂O₃ power devices is far below the theoretical limit. To solve this bottleneck problem, we have separately developed schottky barrier diodes with composite terminal structures and schottky junction barrier diodes with NiO/Ga₂O₃ heterostructures and field plates. The experimental results show that the developed power device has high electrical performance and thermal stability, and has the potential for high power and high frequency applications. At the same time, the degradation mechanism of Ga₂O₃ slot gate MOSFET under multiple physical fields is experimentally studied, and the contribution of interface states and boundary traps to the threshold voltage instability of Ga₂O₃ MOSFET is quantitatively distinguished for the first time; Through experiments and simulations, it is verified that Ga₂O₃ slot gate MOSFETs have different mechanisms for device performance degradation under positive/negative bias stress. The above research achievements are of great significance to promote the application of Ga₂O₃ power devices in high-power applications. The results have been published in the authoritative journal of electronic devices, IEEE Tran Power Electronics、IEEE Tran.  On ISPSD, the top international conference of Electron Device and Power Semiconductor.

Message from the expert

  Gallium oxide, as an ultra wide band gap semiconductor material, has significant advantages in the application of power devices. At present, the research on gallium oxide has not been long in the world. We should seize the opportunity to catch up with the advanced technology, strive to take a leading place in the research and industrialization of gallium oxide field, and achieve outbreaks.