【Epitaxy Papers】Effect of SiO₂ and Post-Annealed Ga₂O₃ Buffer Layers on Ga₂O₃ Thin Film Growth and Properties

      Researchers from the National University of Uzbekistan have published a dissertation titled "Effect of SiO₂ and Post-Annealed Ga₂O₃ Buffer Layers on Ga₂O₃ Thin Film Growth and Properties" in Crystal Growth & Design.

Abstract

      This study explores the impact of SiO₂ and β-Ga₂O₃ buffer layers on the synthesis and properties of β-Ga₂O₃ thin films deposited on n-type Si (100) substrates via sol–gel spin coating. Structural, morphological, and optical properties were characterized using X-ray diffraction, scanning electron microscopy, and UV–vis spectroscopy. Films on β-Ga₂O₃ buffers exhibit significantly enhanced crystallinity, reduced lattice strain, and lower defect density compared to SiO₂/Si and direct Si substrates. Morphological analysis reveals well-defined, coalesced grains, while optical measurements indicate an improved bandgap, reflecting superior film quality. These findings underscore the efficacy of β-Ga₂O₃ buffers in mitigating lattice mismatch, advancing the development of high-quality β-Ga₂O₃ films for high-power electronics and UV optoelectronic applications.

DOI：

https://doi.org/10.1021/acs.cgd.5c01075