【Member News】First in China! World’s Largest! Fujia Gallium Breaks Through 6-inch β-Ga₂O₃ Single Crystal Preparation Technology using the VB Method

      Hangzhou Fujia Gallium Technology Co., LTD. (hereinafter referred to as Fujia Gallium) has made a major breakthrough in the field of Gallium Oxide crystal growth - it has successfully prepared a 6-inch Gallium Oxide single crystal ingot for the first time in China by using the Vertical Bridget method (VB method), with an equal-diameter height of 30mm, which is a conductive material required for power devices. It can meet the processing requirements of complete 6-inch Gallium Oxide conductive substrates.

Figure 1 A 6-inch VB-method Gallium Oxide single crystal bulk

      Fujia Gallium has demonstrated a strong technological iteration capability in the field of Gallium Oxide single crystal. In December 2024, the company was the first in China to achieve the preparation of 4-inch VB-method Gallium Oxide crystals. This breakthrough in 6-inch single crystal marks a leapfrog upgrade in crystal size, once again highlighting the company's strong capabilities in three key areas: core equipment manufacturing, high-precision simulation and emulation, and deterministic thermal field design.

      So far, Fujia Gallium has conducted multiple rounds of 2-6-inch VB method Gallium Oxide crystal growth, continuously upgrading the performance of the equipment and verifying the stability of the growth equipment. The successful development of a 6-inch Gallium Oxide single crystal ingot marks a major breakthrough for the company in crystal growth technology, fully verifying the forward-looking nature of the "dual-wheel drive of process and equipment" strategy. This is another milestone following the realization of the "one-click crystal growth" technology using the EFG method in May 2024. The company has launched VB method Gallium Oxide crystal growth equipment and the corresponding growth process package with independent intellectual property rights, accelerating the construction of the industrial ecosystem in the Gallium Oxide field and promoting the vigorous development of the Gallium Oxide semiconductor industry.

Figure 2 VB method Gallium Oxide crystal growth equipment

      In the future, Fujia Gallium Industry will continue to uphold the concept of innovation-driven development and the prosperity of the Gallium Oxide industry. It will actively collaborate with universities, research institutes, and upstream and downstream units in the industrial chain, constantly enhance equipment and process technology levels, jointly promote the industrial application of Gallium Oxide materials, contribute more to the development of the industry, and realize the vision of "enabling the world to use good materials" as soon as possible.

About Fujia Gallium:

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, The VB method and EFG method crystal growth equipment, substrate grinding and polishing equipment, etc. provide systematic solutions for material development, accelerate the full chain connection of the ultra-wide bandgap Gallium Oxide industry, and promote the application of Gallium Oxide materials in power devices, microwave and radio frequency devices, and optoelectronic detection fields.The company's series of important achievements in the development of Gallium Oxide have been featured and reported by well-known media such as People's Daily, Xinhuanet, China Securities News, and The Paper.

Corporate Honors:

      In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M); It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").