【World Express】UMass Lowell Ga₂O₃ Project Receives Nearly $800K NSF Funding to Advance High-Power Ga₂O₃ Electronic Devices

      Anhar Bhuiyan, Assistant Professor of Electrical Engineering at the University of Massachusetts Lowell (UMass Lowell), is leading two research projects funded by the U.S. National Science Foundation (NSF), with a total budget of $797,000, focusing on the development of next-generation gallium oxide (Ga₂O₃) power devices. Thanks to its ultra-high voltage tolerance and excellent thermal stability, Ga₂O₃ is emerging as a critical material for future high-power electronics.

      Bhuiyan’s team is pursuing research in two main areas: first, developing thick-film Ga₂O₃ materials and device fabrication techniques to ensure stable operation under high-voltage, high-power conditions; second, exploring novel approaches to manufacturing key Ga₂O₃ devices, such as diodes, laying the groundwork for future large-scale production.

      “Gallium oxide can withstand high voltages and maintain stability in extreme environments, including high temperatures and strong radiation, making it suitable for space, defense, and nuclear applications—areas where conventional silicon, SiC, or GaN devices fall short,” said Bhuiyan. “Satellites or autonomous spacecraft require very high power to operate, so we are working to fabricate and protect these power modules using Ga₂O₃. They need to be small, lightweight, and energy-efficient. Ga₂O₃ technology can deliver all these advantages—high energy, high power—while keeping the devices compact and lightweight.”

      To address the limited heat dissipation in high-power devices, the research team has innovatively integrated diamond layers into high-voltage Ga₂O₃ diodes, significantly improving thermal management and enhancing radiation tolerance. This approach enables small, efficient, and high-power devices suitable for satellites, spacecraft, and terrestrial power systems.

      The two NSF projects are led by UMass Lowell, with Bhuiyan and Professor Uttam Singisetti from the State University of New York at Buffalo serving as principal investigators. The team will leverage UMass Lowell’s radiation laboratory and other facilities to test Ga₂O₃ devices under extreme conditions.

      In addition, the research group actively promotes education and outreach, involving undergraduate and graduate students as well as K–12 students through collaborations with local schools, community colleges, and industry partners. “Our goal is not only scientific discovery but also cultivating the next generation of professionals in high-power electronics,” Bhuiyan said.

      The team’s research is expected to provide critical technological support for the industrialization of Ga₂O₃ power devices in applications ranging from electric vehicles and power grids to space systems.