【Member News】Gallium Oxide Research of NCT Adopted under ATLA 2025 Security Technology Research Promotion Program

      The research project “Development of 15 kV Gallium Oxide Power Devices” by Novel Crystal Technology, Inc. has been officially selected for the “2025 Security Technology Research Promotion Program” by ATLA.

      The project focuses on the development of high-purity, thick β-Ga₂O₃ epitaxy & substrates and the design of device peripheral structures for high-voltage applications, aiming to achieve operational validation of β-Ga₂O₃ transistors with a breakdown voltage of 15 kV. The key highlight of this research lies in its potential to significantly enhance the voltage withstand capability of Gallium Oxide power devices while maintaining low-loss characteristics.

      The research team expects that the results will play a crucial role in high-voltage applications such as DC transmission for offshore wind power and pulse power supplies, providing key support for the development of next-generation high-power electronic devices.

      Having long been deeply engaged in the field of Gallium Oxide single crystals and epitaxial growth, Novel Crystal Technology’s selection for this program further underscores its leading-edge R&D capabilities in semiconductor technology.