【Device Papers】Low-temperature Heterogeneous Integration of Ga₂O₃ Devices with Diamond for Enhanced Thermal Management in High-Power Electronics

      Researchers from the Xiamen University have published a dissertation titled "Low-temperature Heterogeneous Integration of Ga₂O₃ Devices with Diamond for Enhanced Thermal Management in High-Power Electronics" in ICEPT 2025.

Abstract

      With the growing demand for high-performance power electronics, gallium oxide (Ga₂O₃) has gained traction due to its optimal combination of dielectric robustness and charge transport efficiency. However, its low thermal conductivity limits high-power applications, necessitating integration with high-thermal-conductivity materials like silicon or diamond. This study addresses the critical thermal challenges in Ga₂O₃ device packaging by leveraging the superior thermal conductivity of diamond, which is increasingly vital for high-power electronics. We propose an innovative β-Ga₂O₃-diamond bonding scheme incorporating metallic nanointerlayers and validate its cooling performance under high-power conditions through thermal simulations. The fabrication process of plasma-activated low-temperature bonded samples is described in detail, followed by an evaluation of their bonding quality. Numerical simulations reveal a 56 °C reduction in maximum operating temperature for β-Ga₂O₃ MOSFETs when implementing diamond-based thermal management, particularly under 0.83 W/mm power loading conditions. Furthermore, the thermal benefits of this heterogeneous integration are systematically investigated under varying power densities and Ga₂O₃ layer thicknesses. This work establishes a reliable thermal management strategy through heterogeneous integration, enabling practical deployment of Ga₂O₃ devices in high-power applications.

DOI：

https://doi.org/10.1109/ICEPT67137.2025.11157313