【Device Papers】Improved Linearity and Switching Performance of AlN/β-Ga₂O₃ MOSHEMT using Al₂O₃ Dielectric

      Researchers from the LNM Institute of Information and Technology have published a dissertation titled " Improved Linearity and Switching Performance of AlN/β-Ga₂O₃ MOSHEMT using Al₂O₃ Dielectric" in 2025 IEEE International Conference on Computer, Electronics, Electrical Engineering & their Applications (IC2E3).

Abstract

      This research work introduces an AlN/β-Ga₂O₃ MOSHEMT design incorporating Al₂O₃ as dielectric. The het-erostructure of AlN and Ga₂O₃ results in high mobility two-dimensional electron gas (2-DEG) due to wide band gap of the two materials. A maximum output conductance of 0.3 S/m was measured. High transconductance (g_m) enables high-frequency operation and efficient power switching, while its derivatives (g_m², g_m³) provide insights into device linearity and distortion, crucial for analog and RF applications. The highest peak for transconductance, first and second derivatives of transconductance is 0.12 S, 0.06 A/V² and 0.12 A/V³ respectively. The on/off current ratio (I_ON/I_OFF) is critical factor for efficient switching and low power consumption in β-Ga₂O₃ MOSHEMTs. This low subthreshold swing (SS) for β-Ga₂O₃ MOSHEMTs leads to faster switching and reduced power loss. Optimizing the threshold voltage (V_th) is crucial to balance on-state current and off-state leakage. Technology Computer Aided Design (TCAD) simulations predict a Sub-threshold swing and threshold voltage suitable for device operation. These promising results validate the AlN/β-Ga₂O₃ MOSHEMT technology for power switching applications.

DOI：

https://doi.org/10.1109/IC2E365635.2025.11166744