【Member News】GaFuture – Ga₂O₃ Epitaxial Wafer Project Wins Third Prize in the 2025 Xidian Maker Competition Finals and Secures Achievement Transformation Agreement!

      Recently, GaFuture Semiconductor Technology (Jinjiang) Co., Ltd. (hereinafter referred to as "GaFuture") has achieved remarkable results in the "Qinchuangyuan" 2025 Xidian Maker Innovation and Entrepreneurship Competition hosted by Xidian University!

      The project " Research and Industrialization of Gallium Oxide Epitaxial Wafer for Ultra-Wide Bandgap Semiconductor Materials" submitted by the company stood out among nearly a hundred outstanding maker teams nationwide due to its cutting-edge technological innovation and broad market potential, winning Third Prize in both the Xi’an Subdivision Competition and the National Finals.

      In addition, the project team was invited to attend the “2025 Xi’an University of Electronic Science and Technology Technology Achievement Transformation Forum” held on October 18. As a representative of high-quality projects, the team successfully completed the on-site equity-based technology transfer signing, marking a solid and crucial step forward in the project’s industrialization and capitalization.

01 Overcoming All Obstacles to Win Double Awards at the Xidian Maker Competition

      The “Qinchuangyuan” 2025 Xidian Maker Innovation and Entrepreneurship Competition, hosted by Xidian University, aims to discover and nurture high-level science and technology entrepreneurship projects while promoting the deep integration of the innovation chain, industrial chain, capital chain, and talent chain. The competition’s substation contests are held in several innovative and dynamic cities, including Qingdao, Guangzhou, Hangzhou, Nanjing, and Xi’an.

      On October 11, during the Xi’an leg of the 2025 Xidian Maker Innovation and Entrepreneurship Competition, the GaFuture team delivered an outstanding roadshow highlighting the project’s technological innovations, market potential, and business model. After fierce competition, the project “Research and Industrialization of Gallium Oxide Epitaxial Wafer for Ultra-Wide Bandgap Semiconductor Materials” emerged as a top performer among 11 high-quality projects, winning third prize in the Xi’an substation and successfully advancing to the national finals.

      The national finals officially kicked off on October 17 at the North Campus of Xidian University. Facing 15 top projects that advanced from the five major regional competitions, the GaFuture team remained calm and composed, fully showcasing their extensive expertise and determination to industrialize in the field of ultra-wide bandgap semiconductor materials. In the end, the project received high praise from the expert judges and was awarded third prize in the finals.

02 Invited to Attend the Event and Complete Technology Transfer Signing

      On October 18, as a representative of the outstanding projects of the competition, the GaFuture team was invited to attend the “2025 Xidian University Technology Transfer Forum.” The forum brought together government agencies, universities, research institutes, investment institutions, and industry leaders, aiming to build a complementary and collaborative “Xidian Transformation Community” to bridge the “last mile” of technology transfer.

      At the forum, the awarding ceremony of the finals of the “Qinchuangyuan” 2025 Xidian Maker Innovation and Entrepreneurship Competition was held first. The GaFuture team took the stage to receive the third prize of the finals, presented by Dong Dawei, Party Secretary of Xidian University Asset Management Company, and Ge Peng, Chairman of Chang’an Huitong Private Equity Fund Management Co., LTD.

      During the subsequent “Technology Transfer Signing” session, the “Research and Industrialization of Gallium Oxide Epitaxial Wafer for Ultra-Wide Band Gap Semiconductor Materials” project by GaFuture completed the transfer valuation and equity investment signing on-site, witnessed by the attending guests.

      The precise injection of capital has given wings to the transformation of achievements. This signing not only reflects the capital market’s strong recognition of the technological prospects and team strength behind the Gallium Oxide epitaxial wafer project, but also signifies that the project is poised to accelerate from the laboratory to the production line, injecting powerful momentum into the company’s subsequent R&D and industrialization efforts.

03 About Us: Focusing on Ultra-Wide Bandgap Semiconductors

      GaFuture Semiconductor Technology (Jinjiang) Co., Ltd. is a high-tech enterprise committed to the research, development, and industrialization of the fourth-generation (ultra-wide bandgap) semiconductor material — Gallium Oxide (Ga₂O₃) epitaxial wafers. With its exceptional physical properties, Gallium Oxide demonstrates revolutionary application potential in high-efficiency power devices, deep ultraviolet detection, radio-frequency electronics, and other fields. It plays a crucial role in advancing China’s pursuit of high-level scientific and technological self-reliance.

      The company’s outstanding performance and successful signing at the Xidian Maker Competition would not have been possible without the strong support from Xidian University, Xidian Science Park, Qinchuangyuan, and other partner platforms. Moving forward, GaFuture will take this milestone as a new starting point to deepen its focus on ultra-wide bandgap semiconductor materials, accelerate technological breakthroughs and market expansion, and continue contributing to the development of China’s semiconductor industry.