【Others Papers】Elastic Constants of β-(AlₓGa₁₋ₓ)₂O₃ for Heterogeneous Interface Applications

      Researchers from the  Pohang University of Science and Technology have published a dissertation titled "Elastic Constants of β-(Al_xGa_1−x)₂O₃ for Heterogeneous Interface Applications" in IEEE Nanotechnology Magazine.

Abstract

      The elastic and piezoelectric properties of β-(Al_xGa_1−x)₂O₃, with compositions ranging from x = 0.125 to 0.25 were analyzed using first principles calculations. The controllable bandgap by Al concentration make it a promising gate dielectric material for Ga₂O₃-based high electron mobility transistors (HEMTs). The computed 13 monoclinic elastic constants reveal composition-dependent trends in mechanical and electrical behavior, underscoring the influence of aluminum concentration on structural stability. Composition-dependent trends in the 13 monoclinic elastic constants are presented from first-principles for x = 0−0.25, without prescribing a specific analytic form; these trends inform the design of strain-engineered materials for advanced semiconductor applications. These findings provide valuable insights into β-(Al_xGa_1−x)₂O₃ and pave the way for improved performance in next-generation Ga₂O₃ HEMTs.

DOI：

https://doi.org/10.1109/MNANO.2025.3607051