【Epitaxy Papers】Si Doping in Amorphous GaOₓ Films via Plasma-Enhanced ALD for Dielectric and Optoelectronic Applications

      Researchers from the Fudan University have published a dissertation titled "Si Doping in Amorphous GaO_x Films via Plasma-Enhanced ALD for Dielectric and Optoelectronic Applications" in IEEE Journal of the Electron Devices Society.

Abstract

      Ga₂O₃ is a representative next-generation wide-bandgap semiconductor. Si doping in Ga₂O₃ plays a crucial role in optimizing performance and expanding applications. Among the synthesis and doping techniques of gallium oxide thin films, plasma-enhanced atomic layer deposition (PEALD) is particularly prominent owing to its high conformality, exceptional uniformity, and atomic-level compositional precision. In this study, a series of amorphous Si-doped gallium oxide (Si-GaO_x) thin films with controlled stoichiometries were fabricated by PEALD and systematically characterized in terms of surface morphology, chemical composition, structural and optical properties. Furthermore, the electrical and photoelectric behaviors of the films were evaluated using metal–insulator–semiconductor (MIS) structures and photodiodes. By correlating subcycle ratio modulation with Si concentration gradients, we identified the optimal doping level for enhanced functionality. These findings demonstrate the potential of PEALD-derived amorphous Si-GaO_x thin films in dielectric and optoelectronic applications.

DOI：

https://doi.org/10.1109/JEDS.2025.3615614