【Conference News】Focus on Ga₂O₃: 2025 Semiconductor Materials Industry Development (Zhengzhou) Conference

      The 2025 Semiconductor Materials Industry Development (Zhengzhou) Conference and the Annual Meeting of the Semiconductor Materials Branch of the China Electronic Materials Industry Association were successfully held on October 23–24, 2025, in the beautiful city of Zhengzhou, renowned as the “heart of China and the center of the Nine Provinces.”

      With the theme “Collaborative Development, Shared Cooperation,” the conference focused on breakthroughs in the research and development of first- to fourth-generation semiconductor materials and their practical device applications.

      Attending today’s conference were distinguished academicians and officials from national ministries, including Academician Hai-Ling Tu of the Chinese Academy of Engineering and Honorary President of the General Research Institute for Nonferrous Metals, Academician Dao-Hua Zhang of the Academy of Engineering, Singapore, and Chief Scientist for Fourth-Generation Semiconductors at the Shenzhen Pinghu Laboratory, Lei Zuo, Director of the China Electronics Technology Group Corporation, and Lili Wang, Fourth-Level Investigator of the Department of Electronics, Ministry of Industry and Information Technology. Provincial leaders in attendance included Chen Yan, Party Secretary and Director of the Department of Industry and Information Technology of Henan Province, Zhanwei Wan, Member of the Party Leadership Group and Deputy Director of the Henan Provincial Development and Reform Commission, and Jiansan Xie, Second-Level Inspector of the State-owned Assets Supervision and Administration Commission of Henan Province. Municipal leaders from Zhengzhou included Jianqiu Zhuang, Deputy Party Secretary and Mayor of the Zhengzhou Municipal People’s Government. In addition, more than 100 distinguished guests from various universities, enterprises, and institutions were invited to attend the conference.

      A total of 56 companies participated in this conference, including five member units of the Alliance—Hangzhou Garen Semiconductor Co., Ltd., Hunan Yujing Machinery Co., Ltd., Shandong Liguan Microelectronics Equipment Co., Ltd., China Electronics Technology Group Corporation No.46 Research Insitute, and Suzhou Raphael Optech Co., Ltd. (listed in order of booth number). The Alliance was invited to participate in this grand event, where it held in-depth exchanges with member units to identify the needs of upstream and downstream enterprises in the Gallium Oxide industry chain and to refine its member service framework. At the same time, the Alliance actively engaged with other exhibitors, introducing the current status and future trends of gallium oxide materials while sharing the latest industry developments and application progress. Through continuous expansion of collaboration and communication channels, the Alliance is steadily advancing toward its goal of becoming an ”Professional, Focused, Dedicated” service platform.

      As a representative of the fourth-generation semiconductor materials, Gallium Oxide (Ga₂O₃) drew significant attention at this grand event. During the plenary session, both Dr. Shi Dongmei, Chief Engineer of the Department of High Technology Research and Development at the National Natural Science Foundation of China, and Academician Zhang Daohua, Chief Scientist for Fourth-Generation Semiconductors at Shenzhen Pinghu Laboratory, made special references to Gallium Oxide, highlighting its strategic importance and growing industrial interest in the power semiconductor sector. In the Fourth-Generation Semiconductor Materials Sub-Forum, three dedicated presentations further emphasized the momentum of Gallium Oxide research and development. Prof. Zhang Haizhong from Fuzhou University discussed the unique advantages and industrialization challenges of Gallium Oxide as a next-generation semiconductor. Mr. Zhang Hui, Chairman of Hangzhou Garen Semiconductor Co., Ltd., delved into the fundamental challenges in Ga₂O₃ single-crystal substrate growth. Mr. Qi Hongji, Founder of Hangzhou Fujia Gallium Technology Co., Ltd., delivered a talk titled “Accelerating the Gallium Oxide Industry at high-speed”, sharing strategies and insights from the perspective of an industrial promoter. These reports collectively demonstrate the rising attention and strategic value of Gallium Oxide within the semiconductor community. At present, the key bottleneck in Ga₂O₃ development lies in further improvement of material quality. Only by aligning material optimization with specific application demands and clearly defined target scenarios can the full potential of Gallium Oxide be unleashed in high-voltage, high-frequency, and high-temperature applications—paving the way for steady industrialization and a more sustainable future for this emerging material.

      The successful conclusion of this conference marked another milestone for China’s semiconductor materials field, showcasing cutting-edge research achievements and industrial progress. Moving forward, the Asian Gallium Oxide Alliance will remain committed to connecting resources across the value chain, driving innovation and application, and contributing to the formation of a more dynamic and integrated semiconductor ecosystem.