【Member News】Awarded Again! GAREN SEMI Honored with the “2024–2025 Semiconductor Materials Industry Contribution Award”

      In the golden autumn of October, industry elites gathered in Zhengzhou for the 2025 Semiconductor Materials Industry Development (Zhengzhou) Conference and the Annual Meeting of the Semiconductor Materials Branch of the China Electronic Materials Industry Association, held from October 22 to 24. At this grand event, Hangzhou GAREN SEMI Co., Ltd. was honored with the “2024-2025 Semiconductor Materials Industry Contribution Award” in recognition of its groundbreaking achievements in the Gallium Oxide industry. Chairman Zhang Hui attended the conference and accepted the award on behalf of the company.

 

01 Authoritative Award Recognition, Showcasing Core Strength

      The "2024-2025 Semiconductor Materials Industry Contribution Award" is led by the Semiconductor Materials Branch of the China Electronic Materials Industry Association for selection. It is an authoritative certification covering the entire generation of semiconductor materials development - from the first-generation silicon and germanium materials that supported the start of the chip industry to the second-generation Gallium Arsenide and indium phosphide materials that promote the development of 5G and new energy. From the third-generation Silicon Carbide and Gallium Nitride materials that led the transformation of power electronics to the fourth-generation Gallium Oxide, Aluminum Nitride and Diamond materials that initiated the era of ultra-high voltage and the next communication era. Only the leading companies of each generation of semiconductor materials are eligible to compete for the award, and the results of the selection can be described as a “generational roadmap” of China’s semiconductor materials industry.

Figure 1 GAREN SEMI has won the Semiconductor Materials Industry Contribution Award

      In the "2024-2025 Semiconductor Materials Industry Contribution Award" selection, Hangzhou GAREN SEMI Co., Ltd. successfully made it to the list of awardees. Four leading domestic semiconductor materials companies, such as SICC Co., Ltd., Shanxi Semisic Crystal Co., Ltd., Longi Superconducting (Wuxi) Intelligent Technology Co., Ltd. and Zhejiang Huasheng Mold Technology Co., LTD., were honored with this award.

      Winning an award alongside peers from different generations of semiconductor technology not only demonstrates GAREN SEMI’s remarkable achievements in core areas such as technological innovation, product quality, and market application, but also reflects the industry’s strong recognition of the company’s past accomplishments. More importantly, it signifies that GAREN SEMI possesses the potential and strength to drive future advancements in the semiconductor materials field and to compete in the industry’s core tracks.

 

02 Deeply Cultivating the Gallium Oxide Track to Set a Benchmark for Industry Contribution

      As a core representative of fourth-generation semiconductor materials, Gallium Oxide has emerged as a key enabling material for next-generation power electronics and RF devices, thanks to its wide bandgap, high breakdown electric field, and excellent thermal stability. Since its founding, GAREN SEMI has remained dedicated to the research, development, and industrialization of Gallium Oxide, achieving multiple technological breakthroughs. In March 2025, GAREN SEMI made a global debut with its 8-inch Gallium Oxide substrate—becoming the first company worldwide to master single-crystal growth technology at this scale. The company not only set an industry record by achieving size iteration from 2 inches to 8 inches within consecutive years, but also continues to build a comprehensive technology ecosystem that spans from material preparation to device application.

Figure 2 GAREN SEMI continue to break through the growth size of Gallium Oxide

 

      Winning the Industry Contribution Award not only represents strong recognition of GAREN SEMI’s technological innovation and leadership in industrial advancement, but also affirms its continuous efforts in tackling key challenges in the Gallium Oxide field. The company has made consistent breakthroughs in critical areas such as single-crystal growth and epitaxial process optimization, successfully overcoming industry bottlenecks including the stability of large-sized single-crystal fabrication and the control of material homogeneity. Its series of Gallium Oxide products deliver outstanding performance, providing crucial support for the domestic substitution of fourth-generation semiconductor materials in China and effectively filling technological gaps in related domestic sectors.

 

03 Multiple Awards, Showcasing Comprehensive Industry Leadership

      In 2025, GAREN SEMI actively participated in major exhibitions and competitions worldwide, winning multiple prestigious awards. In March 2025, at SEMICON CHINA, the world’s largest semiconductor industry event, GAREN SEMI globally launched the 8-inch gallium oxide wafer substrate and received the “SEMI Outstanding Contribution Award for Sustainable Development.”

Figure 3 The SEMI Sustainability Awards Ceremony

 

      In April 2025, at the 2025 Jiu Feng Shan Forum (JFSC) and Compound Semiconductor Industry Expo (CSE), GAREN SEMI was awarded the "Solidarity Colleagues Award".

Figure 4 Awarding ceremony of the Solidarity Colleagues Award

      In May 2025, at the fourth session of the Fourth member conference of the Zhejiang Semiconductor Industry Association, Hangzhou GAREN SEMI was awarded the "Innovation Vitality Award" of the Zhejiang Semiconductor Industry for its breakthrough achievements in Gallium Oxide technology.

Figure 5 The scene of the "Innovation Vitality Award"

 

      In October 2025, the national ranking of the 10th “Maker China” SME Innovation and Entrepreneurship Competition was officially released. Hangzhou GAREN SEMI Co., Ltd., with its breakthrough technologies and industrialization achievements in the ultra-wide bandgap semiconductor Gallium Oxide field, successfully made it into the Top 500 enterprises nationwide in the enterprise group category.

Figure 6 Awarding ceremony of the 10th "Maker China" Zhejiang Provincial Finals

 

      In October 2025, the national list of the 10th "Maker China" Small and Medium-sized Enterprises Innovation and Entrepreneurship Competition was officially announced. Hangzhou GAREN SEMI Co., Ltd. successfully made it to the top 500 of the national enterprise group with its breakthrough technology and industrialization achievements in the field of ultra-wide bandgap semiconductor Gallium Oxide.

Figure 7 GAREN SEMI was awarded as a small and medium-sized enterprise in the 10th "Maker China" competition

Top 500 in the National enterprise group of Innovation and Entrepreneurship Competition (in no particular order)

 

04 Anchor the Course of Innovation and Continue Writing a New Chapter of Leadership

      The 2025 Semiconductor Materials Industry Development (Zhengzhou) Conference and the Annual Meeting of the Semiconductor Materials Branch of the China Electronic Materials Industry Association centered on the theme of “Coordinated Development and Shared Cooperation.”
The conference focused on breakthroughs in the research, development, and application of first- to fourth-generation semiconductor materials. It gathered more than 300 organizations and over 600 experts, scholars, and industry leaders from across the semiconductor materials sector and its upstream and downstream industries.
Participants engaged in in-depth discussions on key topics such as enhancing industrial chain integration, strengthening supply chain synergy, reinforcing the core competitiveness of new materials enterprises, and injecting sustained momentum into industrial upgrading—jointly contributing insights to advance the core competitiveness of China’s semiconductor materials industry.

      Winning this award at the conference is both an honor and a responsibility.
Moving forward, GAREN SEMI will take this opportunity to deepen its commitment to the field of fourth-generation semiconductor materials such as Gallium Oxide, increase investment in R&D, strengthen industrial chain collaboration, and further refine its product portfolio while enhancing technical service capabilities.
Under the leadership of Chairman Zhang Hui, the company will continue to lead industry development through technological innovation, empower downstream applications with high-quality products, and contribute more GAREN strength to the independent and high-quality development of China’s semiconductor materials industry.

For more information about GAREN SEMI and its products

Visit our official website: http://garen.cc/

Or contact us in the following ways:

Mr. Jiang :15918719807

Email :jiangjiwei@garen.cc

Mr. Xia :19011278792

Email :xianing@garen.cc