【Epitaxy Papers】Effect of in Situ Si Doping of Quartz Substrates on β-Ga₂O₃

      Researchers from the Xi’an University of Posts and Teleconmmunications have published a dissertation titled " Effect of in Situ Si Doping of Quartz Substrates on β-Ga₂O₃" in 2025 4th International Symposium on Semiconductor and Electronic Technology (ISSET).

Abstract

      Thin films of β-Ga₂O₃ were prepared on quartz substrates by electron beam evaporation, and the effects of the annealing temperature on the structural and electrical properties of the films were investigated. The carrier density of the annealed films at 500 °C was 6.55727×10¹⁸ cm⁻³ with a carrier mobility of 32.08672 cm²/Vs as measured by Hall, and the high carrier content of the films was attributed to the diffusion of Si elements in the substrate, and the EDS measurements showed that the annealing process indeed contributed to the diffusion of Si elements at the interface into the films. We also found that the carrier content of the films is not only related to the annealing temperature, but also to the surface morphology of the films, and the cracks on the surface of the films are also a key factor affecting the conductivity of the films.

DOI：

https://doi.org/10.1109/ISSET66828.2025.11185033