【Device Papers】UV Response Mechanism of Ultra-High Response Microstructure Ga₂O₃ Based Solar-Blind UV Detector with Simple MSM Structure and the Applications of the Device in Various Scenes

      Researchers from the Shenzhen University have published a dissertation titled "UV Response Mechanism of Ultra-High Response Microstructure Ga₂O₃ Based Solar-Blind UV Detector with Simple MSM Structure and the Applications of the Device in Various Scenes" in Advanced Materials Technologies.

Abstract

      The actual application of ultrahigh response Ga₂O₃ solar-blind UV detectors in various scenes is a key problem in the new generation revolution of the electronic and information industry. Herein, the mechanism for the high response Ag/Ga₂O₃/Ag detector (3.77 × 10⁵ A W⁻¹@15 V at 230 nm) with mixed microstructures under different conditions is deeply explored, and the applications of the mixed-structure Ga₂O₃ device in various areas are studied. Hole-trapping mechanism in the device under small voltage and faint UV conditions supports its application in neurosynaptic simulation. The fast response and recovery speed of the device under medium voltage and faint pulse UV conditions from the tunneling breakdown mechanism induced a giant prospect in UV communication of the device. Outstanding high I_UV (35 mA) of the Ag/Ga₂O₃/Ag detector under high voltage at 254 nm from the avalanche breakdown mechanism, promotes its applications in missile alarming and ozone hole monitoring. The change in UV response mechanism in one simple structure Ag/Ga₂O₃/Ag detector with high density of nano crystalline Ga₂O₃/amorphous Ga₂O₃ interfaces under different measurement condition, is especially meaningful in wide spread of high-performance Ga₂O₃ based detectors with mixed microstructures in various application scenarios (neurosynaptic simulation, UV information communication, missile alarming, ozone hole monitoring, et al.).

DOI：

https://doi.org/10.1002/admt.202501257