【Member News】Fujia Gallium: Showcasing Hard-Core Strength from the Gallium Oxide Sector at APCSCRM 2025

      At the 6th Asia Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2025), Gallium Oxide emerged as one of the most closely watched directions in the field. As an invited participant, the Asian Gallium Oxide Alliance presented a special feature on one of its governing member units—Hangzhou Fujia Gallium Technology Co., Ltd. Below, let us take a closer look at Fujia Gallium to better understand its core businesses and flagship products.

Hangzhou Fujia Gallium Technology Co., Ltd.

      Founded on December 31, 2019, Hangzhou Fujia Gallium Technology Co., Ltd. is the first “hard-tech” enterprise incubated and registered by the Hangzhou Institute of Optical and Fine Mechanical Engineering. Guided by the vision of “bringing advanced materials to the world”, the company is committed to the industrialization of wide-bandgap semiconductor Gallium Oxide materials.

      Its core products include Gallium Oxide single-crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, as well as Gallium Oxide crystal growth and processing equipment. These products primarily serve applications in power devices, microwave and RF electronics, and optoelectronic detection. A series of the company’s major achievements in the Gallium Oxide field have been featured by leading media outlets such as People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

Main Products

      ★ Gallium Oxide EFG Equipment

      This system is specifically developed for EFG growth of β-Gallium Oxide crystals. It adopts electromagnetic induction heating and integrates functions including vacuum and atmosphere exchange, pulling control, precision weighing, and automatic data recording. The system can be upgraded to a fully automated “one-click crystal growth” solution.

      ★ Gallium Oxide VB Equipment

      Designed specifically for VB growth of β-Gallium Oxide crystals, this equipment has been optimized through iterative coupling of simulation and experimental validation. It integrates dual-mode high-precision temperature measurement and control, with stability verified through multiple experimental cycles. The system supports the growth of 2–6 inch β-Gallium Oxide crystals, meeting the needs of both research and mass-production scenarios.

For more information
      Contact:
      Mr. Ying: +86 135 0675 3213
      Ms. Sun: +86 157 5719 0545

      Website: www.fujia-hiom.com