【Domestic Papers】Electrical Characteristics of Ultrathin β-Ga₂O₃ MOSFETs on SiO₂ Substrates

      Researchers from the Xi’an University of Posts & Telecommunications have published a dissertation titled "Electrical Characteristics of Ultrathin β-Ga₂O₃ MOSFETs on SiO₂ Substrates" in Semiconductor Technology.

      The study focuses on MOSFETs based on the ultrawide-bandgap semiconductor β-Ga₂O₃, which show significant application potential in power driver circuits. The electrical characteristics of ultrathin β-Ga₂O₃ MOSFETs fabricated on SiO₂ substrates were systematically investigated. By employing different process parameters to fabricate MOSFETs with various device structures, the effects of key fabrication and structural parameters—including film thickness (60, 120, and 180 nm), annealing temperature (700, 800, and 900 °C), source–drain electrode spacing (30, 35, and 40 μm), and gate–source electrode spacing (5, 10, and 15 μm)—on device performance were examined.

      The results indicate that both film thickness and annealing temperature have a significant influence on the threshold voltage of the devices. Considering factors such as threshold voltage and saturation current, MOSFETs fabricated with a film thickness of 120 nm exhibit the best overall performance. Limited by the subthreshold swing and threshold voltage, devices annealed at 900 °C show optimal performance. In addition, the source–drain and gate–source electrode spacings directly modulate the on-resistance and saturation current; devices with a source–drain spacing of 35 μm and a gate–source spacing of 10 μm achieve the best comprehensive performance. This work provides valuable reference and guidance for the further development of β-Ga₂O₃-based MOSFETs.

LINK：

https://kns.cnki.net/kcms2/article/abstract?v=4J3GFaKSuTOZM1NfFR-AOBCY_u8NkWSYjMnSfaRPutzrZhlntPfkPkxOtQstqT9tmbYGhF08WKgr_-B9qtn-o1RIx-dseZVoTIFI6h452rVVSrXLicdA63wNR6g9mP8EgExER8I4cFHXthxpUrrVOZog0b3tqdATI4YfjYIELkP3EGyZgdmD4w==&uniplatform=NZKPT&language=CHS