【Device Papers】Compact Modeling of β-Ga₂O₃ Lateral Depletion Mode MOSFET

      Researchers from the University of Arkansas have published a dissertation titled "Compact Modeling of β-Ga₂O₃ Lateral Depletion Mode MOSFET" in IEEE Electron Device Letter.

Abstract

      Gallium oxide (Ga₂O₃) holds significant potential to expand the boundaries of the wide bandgap (silicon carbide, gallium nitride and others) devices. The field plated structure of β-Ga₂O₃ lateral depletion mode MOSFETs has shown enhanced breakdown characteristics. In this work, a compact model describing channel current, resistances and non-linear capacitances has been developed for the β-Ga₂O₃ lateral MOSFETs. The model equations account for mobility, dielectric constant, voltage-dependent depletion region, and other physical factors. The DC characteristics are calibrated using experimental transfer and output data, while C-V characteristics are estimated through TCAD simulation of a 750V field-plated β-Ga₂O₃ MOSFET. The model aligns well with both DC and C-V characteristics, covering reverse transfer, output, and input capacitances. Temperature scaling is integrated to capture device behavior over a range of temperatures, and the model’s transfer characteristics show good agreement with experimental data up to 200°C.

DOI：

https://doi.org/10.1109/LED.2025.3639367