
【Specialist Intro】Ma Jiangang——the Member of Technical Expert Committee
日期:2023-03-14阅读:164
Profile
Ma Jiangang, professor and doctoral supervisor of Northeast Normal University
In 1999, he graduated from the Department of Physics of Northeast Normal University with a bachelor's degree, and in 2004, he graduated from Changchun Institute of Optical Machinery and Physics of Chinese Academy of Sciences majored in condensed matter Physics. From 2006 to 2011, he served as a special post-doctoral researcher in Kobe University in Japan and The University of Oklahoma. Since 2011, he has been teaching at Northeast Normal University. Currently, he is the dean of the School of Physics of Northeast Normal University, and the deputy director of the Key Laboratory, the Ministry of Ultraviolet Emission Materials and Technical Education. He is the director of Jilin Physical Society and the director of Jilin Military Engineering Society. He is awarded the title of Scientific and Technological Innovation Leading Talent of "Changbai Mountain Talent Project" of Jilin Province.
Achievements
Professor Ma Jiangang has been engaged in the growth of wide band ban semiconductor materials and physical properties of device for a long time, and has made a series of research results in new transparent conductive film, ultraviolet light emission and detector parts. He has undertaken and completed major scientific research projects of the Ministry of Science and Technology, key fund projects of the State Administration of Science, Technology and Industry for National Defense and equipment Development Department of the CMC, and major scientific research projects of Jilin Province. He has published more than 120 academic papers, and has been granted 5 national invention patents, and has trained more than 30 graduate students.
The achievements related to gallium oxide materials are as follows:
- Solar-blind UV photodetector with low-dark current and high-gain based on ZnO/Au/Ga2O3 sandwich structure Materials Today Physics 2022 DOI: 10.1016/j.mtphys.2022.100673
- β-Ga2O3-based solar-blind photodetector with ultrahigh responsivity via optimizing interdigital electrode parameters,IEEE Electron Device Letters 2022 DOI: 10.1109/LED.2022.3192178
- Piezoelectric Effect Enhanced Flexible UV Photodetector Based on Ga2O3/ZnO Heterojunction, Materials Today Physics 2021 DOI: 10.1016/j.mtphys.2021.100464
- Suppression of persistent photoconductivity in high gain Ga2O3Schottky photodetectors Chinese Physics B 2021 DOI: 10.1088/1674-1056/ac2d1b
- Achieving high transparent β-Ga2O3 through AlGa-InGa-VO Journal of Alloys and Compounds 2019 DOI:10.1016/j.jallcom.2019.04.058
- Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction Optics Express 2019 DOI:1364/OE.27.008717
Message from the expert
Industrial Alliance to bring forth the new ,Set sail gradually into the gallium world!