【Device Papers】Thermal and Structural Analysis of a Press-Pack Ga₂O₃ Schottky Diode

      Researchers from the University at Buffalo have published a dissertation titled "Thermal and Structural Analysis of a Press-Pack Ga₂O₃ Schottky Diode" in 2025 IEEE Energy Conversion Conference Congress and Exposition (ECCE).

Abstract

      Ga₂O₃ is an ultrawide bandgap material with the potential to replace SiC in Power Electronic applications. However, wide-scale adoption is hampered by its poor thermal conductivity. Conventional cooling techniques will be insufficient in cooling Ga₂O₃ devices. Double-side cooling is an efficient technique to achieve lower temperatures. Press-Pack packaging ensures electrical contact through pressure. It is inherently designed to support double-side cooling. In this paper, a Press-Pack package was designed to cool a Ga₂O₃ Schottky diode. Finite Element Analysis simulations were conducted in Ansys Icepak and Mechanical to evaluate its thermal and structural performance. Multiple design variations, heat losses, and cooling techniques were tested.

DOI：

https://doi.org/10.1109/ECCE58356.2025.11260395