【Conference Information】The 11th Chinese Academic Conference of Zinc Oxide Related Materials [First Round Notification]
日期:2026-01-04阅读:54

Wide-bandgap oxide semiconductor materials, represented by zinc oxide (ZnO) and Gallium Oxide (Ga₂O₃), possess unique advantages in fields such as ultraviolet (UV) light emission and lasers, UV–solar-blind photodetection, and sensing. After years of development, understanding of the optical, electrical, magnetic, piezoelectric, and catalytic properties of ZnO and related materials has deepened continuously. Research on the design, fabrication, and application of these materials and devices has steadily expanded, covering areas including optoelectronics, microelectronics, energy, information sensing, environmental science, and biomedical applications, driving vigorous growth in related industries. In addition, transparent conductive films, thin-film transistors, and power devices based on these materials have found applications in optoelectronic integration and optoelectronic convergence.
The Chinese Academic Conference of Zinc Oxide Related Materials is organized by the Luminescence Branch of the Chinese Physical Society and focuses on discussions and exchanges concerning wide-bandgap oxide semiconductor materials and devices. Since its inception in 2003, the conference has been held biennially, previously taking place in Haikou, Nanjing, Zhejiang, Changchun, Shenzhen, Xiamen, Kunming, Nanning, Zhenjiang, and Nanjing.
The 11th National Conference on Zinc Oxide and Related Materials will be hosted by Chongqing Normal University and other institutions, and is scheduled to be held in Chongqing from April 24 to 26, 2026. The conference aims to showcase the latest research achievements in the field of ZnO and related materials in China, providing a platform for academic and technological exchange. It seeks to collectively discuss fundamental scientific and technical challenges in the research of metal oxides and related wide-bandgap materials, enrich the scientific understanding of related physical phenomena, and promote the application of ZnO and related materials.
The conference will invite renowned experts and scholars from China and abroad working in the field of ZnO and related materials to give plenary talks. Activities will include invited plenary presentations, invited session talks, graduate student innovation forums, poster sessions, and product exhibitions.
Researchers from both domestic and international institutions—especially young scientists and graduate students—are warmly encouraged to submit papers. Professionals and companies in the field of relevant equipment and instruments are also welcome to participate in the exhibition and exchanges.
The following notice outlines the themes for paper submissions and related matters. Additional details will be provided in subsequent conference announcements, so please stay tuned.
Conference Topics
1.Growth, defects, and band engineering of ZnO and related materials
2.Light emission, lasers, and microcavity properties of ZnO and related materials
3.Photodetection and artificial synapse devices based on ZnO and related materials
4.Applications of ZnO and related materials in catalysis and energy
5.Applications of ZnO and related materials in sensors and biomedical fields
6.Flexible, wearable, and transparent electronic devices based on ZnO and related materials
7.Theoretical calculations and machine-learning-assisted design of ZnO and related materials
8.Novel ultra-wide-bandgap semiconductor materials and devices
9.Frontier interdisciplinary research on novel multifunctional semiconductor materials
10.Graduate Student Innovation Forum
Conference Contacts
Conference Email: cq11thzno@163.com
Contacts: Li Wanjun, Zhang Hong, Tang Yan

