【Member News】Provincial Recognition Fuels Innovation: Hangzhou Garen Semiconductor Approved as a Zhejiang Provincial Enterprise Research Institute, Leading the Industry with Multiple Core Technologies

      Recently, the Zhejiang Provincial Department of Economy and Information Technology officially released the list of Provincial Enterprise Research Institutes for 2025. The Zhejiang Garen Semiconductor Gallium Oxide Materials Enterprise Research Institute (No. 323), established by Hangzhou Garen Semiconductor Co., Ltd. (hereinafter referred to as GAREN SEMI), was successfully approved. This authoritative provincial-level recognition not only affirms GAREN SEMI’s technological innovation capabilities and achievements in industry–university–research collaboration within the field of core semiconductor materials, but also marks an important milestone in the company’s alignment with the “Innovative Zhejiang” strategy and its contribution to the cultivation of new quality productive forces.

      In 2025, leveraging the Enterprise Research Institute as a core innovation engine, GAREN SEMI focused on overcoming critical “bottleneck” challenges in the Gallium Oxide materials value chain. The company achieved breakthrough progress across four key areas, addressing major industry pain points and establishing a leading position in the global Gallium Oxide materials landscape through a series of original technological innovations.

01 Large-Size Single Crystal Growth

      In 2025, GAREN SEMI successfully realized the stable mass production of 8-inch Gallium Oxide single crystals and substrates using both the casting method and the Vertical Bridgman (VB) method. This achievement effectively removed supply constraints for large-size Gallium Oxide single crystals, covering mainstream crystal orientations and fully meeting customized downstream device requirements. GAREN SEMI has thus become the world’s first company to achieve 8-inch Gallium Oxide single crystal growth across multiple growth techniques and multiple crystal orientations.

02 Epitaxial Growth Technology

      In 2025, GAREN SEMI successfully commercialized its 6-inch Gallium Oxide homoepitaxial growth technology, achieving optimized lattice matching and thickness uniformity control. Key performance indicators have reached an advanced industry level, significantly reducing costs and providing essential support for the large-scale production of mid- to high-end power devices.

03 Core Equipment Development

      In 2025, GAREN SEMI officially launched the “SCIENCE” series research-grade VB crystal growth systems. These systems are designed to address key scientific challenges such as temperature control and impurity regulation, while continuously improving operational stability and process compatibility. By lowering the technical threshold for research and development, they provide reliable domestically developed equipment solutions for the industry.

04 Industry Standard Development

      In 2025, two Gallium Oxide material group standards led by GAREN SEMI—“β-Gallium Oxide Homoepitaxial Wafers” and “Test Method for Dislocation Density of Gallium Oxide Single Crystals”—were officially released, standardizing technical specifications and testing methodologies. In addition, the national standard “Testing Method for Dislocation Density of Gallium Oxide Single Crystal”, in which GAREN SEMI participated as a drafting organization, has been formally issued. This standard fills a long-standing gap in China’s semiconductor single crystal transmittance testing framework and provides the industry with unified and standardized testing criteria.

About Garen Semiconductor

      Founded in September 2022, Hangzhou Garen Semiconductor Co., Ltd. is a technology-driven enterprise specializing in the R&D, production, and sales of wide-bandgap semiconductor materials such as Gallium Oxide. Leveraging the State Key Laboratory of Silicon and Advanced Semiconductor Materials at Zhejiang University and the Zhejiang University Hangzhou International Science and Innovation Center, the company has built a strong R&D, production, and operations team led by an academician of the Chinese Academy of Sciences as chief advisor.

      Garen Semiconductor has pioneered new Gallium Oxide single-crystal growth technologies and has secured 14 international and domestic invention patents, breaking Western monopolies and technological blockades in Gallium Oxide substrate materials. Oriented toward addressing major national needs, the company is committed to sustained innovation in the upstream Gallium Oxide industry chain, striving to provide reliable material support for China’s power electronics and related industries.

      By leading industry innovation, Garen Semiconductor has adopted proprietary casting and other novel single-crystal growth technologies to achieve breakthroughs in the production of 8-inch Gallium Oxide single-crystal substrates and wafer-scale (010)-oriented single-crystal substrates. The company has also developed the first Gallium Oxide–dedicated VB crystal growth system with an integrated process package. Garen Semiconductor has mastered core technologies across the entire Gallium Oxide value chain—including crystal growth, processing, and epitaxy—and provides customers with large-size, high-quality Gallium Oxide products and equipment backed by fully independent intellectual property rights.

For more information about GAREN SEMI and its products

Visit our official website: http://garen.cc/

Or contact us in the following ways:

Mr. Jiang :15918719807

Email :jiangjiwei@garen.cc

Mr. Xia :19011278792

Email :xianing@garen.cc