【Industry News】Events on Gallium Oxide

A Enterprise Project of Shanghang Promoted to the National Finals

  According to Shanghang County Industry and Information Technology Bureau, the 5G filter project of Fujian Sunwise Semiconductor won the "Winning Prize" in the National Disruptive Technology Innovation Competition, Circuit Field, and advanced to the national finals. This is the only award-winning private enterprise project among the three projects selected by Fujian Province (Xiamen Special Economic Zone not included).

  The National Disruptive Technology Innovation Competition, sponsored by the Ministry of Science and Technology, began the mass election nationwide in early August 2022, focusing on 9 technical fields, 2,851 projects in total were collected and applied, and 348 projects entered the field competition. Among them, 106 projects competed in three fields, namely integrated circuit, artificial intelligence and interdisciplinary.

  Fujian Sunwise Semiconductor was introduced and settled in Shanghang in 2020, which is the first enterprise in the world with independent mass production and delivery capacity of gallium oxide-based BAW filter chips.

Notice on the release of the list of major science and technology projects of 2022 in Changsha

  To thoroughly implement the spirit of 20^th CPC Conference and General Secretary Xi Jinping’s series of important speeches, to strive to implement the strategy of "to Make the Capital City More Powerful", to make full use of domestic and foreign advantages of science and technology innovation resources to promote key core technology research, the implementation of 2022 annual" Being the Top" major science and technology projects was carried out, according to the Changsha "Being the top" major science and technology project regulation "(Chang Sci- [2022] no. 31, hereinafter referred to as the regulation).

  10 "Being the Top" project topics were released this time, among which Project No.6 is the fourth generation of gallium oxide power semiconductor single crystal substrate growth, device preparation and process.

Task:

  To carry out the research and development of single crystal growth technology of gallium oxide, the development of process of gallium oxide based standard device, the characterization and improvement of defects in the interface and in the medium, to carry out the growth research and preparation of gallium oxide semiconductor substrate and device process, including the growth and preparation of large area, high quality and controllable n-doped gallium oxide substrate; the research and development of low interface defect / gallium oxide interface; the research and development of high performance gallium oxide based power device approaching the theoretical limit of gallium oxide (high breakdown voltage, low conduction resistance).

Indicators for Performance Check:

1. Gallium oxide substrate substrate: the size ≥ 50*100*1mm, the half-height width of XRD swing curve <90 arcsec, and the dislocation density <4x10⁵cm^-2;
2. Grid medium / gallium oxide interface: the surface roughness is lower than 0.25nm; the density of interface state is lower than 4x10¹¹cm^-2 eV^-1;
3. Gallium oxide based Schottky diode: breakdown voltage ≥ 1800V, partial super junction ≤ 7m Ω cm²;
4. Gallium oxide based MOSFET: breakdown voltage≥ 3000V, partial super junction ≤45m Ω cm²;
5. Gallium oxide based MESFET: breakdown voltage ≥1500V, partial super junction ≤ 16m Ω cm²;
6. To apply for more than 5 invention patents, and publish no less than 10 high-level papers.

Focus on the world's science and technology frontier, forging a major power of the Nation

  Across from the Qiantang River, near the Asian Games Village, Zhejiang University and Hangzhou municipal government are comprehensively promoting the major science and technology innovation platform strategically cooperated by both the University and the Government—— Zhejiang University Hangzhou International Science and Technology Innovation Center. To seize the advantage, in Xiaoshan District, Hangzhou, a factory has become the first to transform into a startup block, and become a highland of science and technology innovation.

  Lately, there came good news that the center successfully prepared a 2-inch diameter gallium oxide wafer, under the leadership of Academician Yang Deren, the chief scientist of the center.

  "It is the first time in the world to produce a 2-inch gallium oxide wafer with this fully independent intellectual property technology, which is mainly applied in new energy vehicles, rail transit and 5G communications." said professor Zhang Hui, Advanced Semiconductor Research Institute, Science and Technology Innovation Center.

  A thin gallium oxide wafer, with its market price as high as tens of thousands of yuan, has an important value to the research and development of high-performance power devices, and the research process has been tough.

  "This is the achievement by many researchers working day and night."Zhang Hui said, “gallium oxide single crystal grow in a furnace with its temperature up to 1800 degrees Celsius. As a part of process single crystal growth, it takes a day to melt raw materials, and from the preparation of raw materials to the final single crystal product, it takes a full three days, during which the process should be being watched.

  Now, in the center, young and middle-aged researchers have grown into the backbone force, and it is already common to do scientific research all day and all night. "To take this preparation of gallium oxide wafers for example, the team stuck for three days and three nights. When sleepy, they took a nap on the chair, when tired, they went to the corridor to move around. Everyone had no complaint or regrets.”

In global patent applications of the global gallium oxide, photoelectronic devices have broad prospects

  Gallium oxide has broad development prospects in photoelectronic devices. Generally speaking of gallium oxide technology, the quantity of whose patents is very large. Japan has more than half of patent applications, while China ranks second after Japan, and both Japanese and Chinese patent applications account for about 80% of the total gallium oxide. In the ranking, top patent applications of gallium oxide Schottky diode are several Japanese companies, and domestic enterprises and universities also have a certain number of applications. Among them, leading foreign companies are FLOSFIA, Semiconductor Energy Laboratory, Idemitsu Kosan, and leading domestic enterprises are China Electronics Technology Group Corporation 13^th Institute and Xidian University.

  Since 2016, the number of domestic patent applications on gallium oxide has been steadily increasing, especially in recent years, the number of gallium oxide-related applications has increased rapidly. In the last years, Chinese applicants have been studying photoelectronic devices, and patent applications in this field are increasing, and the proportion of device process has increased than before. On the international hot issue--power devices, China's application is relatively fewer. In addition, the proportion of applications in the field of single crystal growth technology is also very low. With such a situation, we are likely to rely on foreign technology, which is not conducive to the domestic research and development. Global gallium oxide power devices are still in their infancy, we hope that universities, research institutes and enterprises at home can learn from each other to promote all-round development.