【Device Papers】Bidirectional blue-violet light-emitting diode based on n-Ga₂O₃/i-AlN/p-GaN heterojunction

      Researchers from the Henan University of Science and Technology have published a dissertation titled "Bidirectional blue-violet light-emitting diode based on n-Ga₂O₃/i-AlN/p-GaN heterojunction" in Optics & Laser Technology.

Abstract

      Gallium oxide (Ga₂O₃) films were fabricated by radio frequency magnetron sputtering at different sputtering temperatures, and the physical properties of the films were systematically analyzed. A n-Ga₂O₃/i-AlN/p-GaN heterojunction light-emitting diode (LED) was manufactured fabricated using optimized process conditions. The device shows good rectification characteristics across various temperatures, with a turn-on voltage of about 2.3 V. Additionally, a systematic investigation of the device’s electroluminescence (EL) characteristics revealed that it exhibits typical bidirectional electroluminescence behavior. Under forward bias, the sample emits purple light at 425 nm and blue light at 433 nm. Under reverse bias, the sample emits ultraviolet light at 378 nm and purple light at 422 nm. Then, the change of EL of the device was observed by the temperature control platform. This LED demonstrates a color stability up to 80 ℃ and good temperature stability. Finally, the light-emitting mechanism of the diode was analyzed using band diagrams combined with Gaussian peak fitting of the light-emitting spectrum. This work provides a new approach for the development of special light-emitting semiconductor devices.

DOI：

https://doi.org/10.1016/j.optlastec.2025.114341