【Member News】From Scientific Breakthrough to Industrial Application: Qi Hongji Honored as Provincial Outstanding Contributor, Fujia Gallium Advances Gallium Oxide Industrialization

      Recently, the People’s Government of Zhejiang Province released the Notice on Commending Outstanding Young and Middle-Aged Experts with Significant Contributions in Zhejiang Province and Outstanding Contributing Units for the Cultivation of Young and Middle-Aged Experts (Zhejiang Government Document [2026] No. 4). Qi Hongji, Director of the Hangzhou Institute of Optical Precision Machinery, was awarded the title of “Zhejiang Province Outstanding Young and Middle-Aged Expert with Significant Contributions.”

      Qi Hongji currently serves as Director of the Hangzhou Institute of Optical Precision Machinery, Chairman of Fujia Gallium Technology Co., Ltd., and Chief Scientist of a National Key R&D Program of the Ministry of Science and Technology. He also holds concurrent positions as Secretary-General of the Optical Materials Committee of the Chinese Optical Society, Council Member of the Zhejiang Optical Society, Council Member of the Crystal Materials Division of the Chinese Rare Earth Society, Council Member of the Wide Bandgap Semiconductor Committee of the China Nonferrous Metals Society, and Board Member of the Asia Gallium Oxide Alliance. He has long been engaged in research on ultra-wide-bandgap semiconductor Gallium Oxide materials.

      As a leading scientist in the field of materials science, Qi Hongji has led more than 20 national-level research projects, published over 150 SCI-indexed papers, and been granted nearly 100 invention patents, including 16 internationally authorized patents in the United States, Japan, Russia, and other countries. In recognition of his outstanding contributions to scientific innovation and technology transfer, he has received multiple honors, including the Military Science and Technology Progress Award, the Anhui Provincial Science and Technology Award, and the Shanghai Science and Technology Award. In 2024, he was selected as a Hangzhou Municipal Government Special Allowance Expert, and in the same year received an individual commendation for his contributions to building Hangzhou as a preferred hub for technology transfer and commercialization.

      Qi Hongji has long focused on critical materials of strategic national importance, achieving a series of landmark results in the field of Gallium Oxide:

      Single Crystals: On December 27, 2025, his team for the first time worldwide successfully grew an 8-inch Gallium Oxide crystal using the Vertical Bridgman (VB) method, setting a new international record for VB-grown Gallium Oxide crystal size.

      Epitaxy: On June 7, 2025, the team developed MOCVD-based homoepitaxial Gallium Oxide technology. Verified by an independent third-party authority, thick epitaxial layers (> 10 µm) achieved a carrier mobility of 181.6 cm²/V·s, reaching an internationally leading level.

      Devices: On October 11, 2025, in collaboration with Fuzhou University, the team realized a vertical power schottky barrier diode (SBD) with world-leading performance based on Fujia Gallium’s MOCVD Gallium Oxide epitaxial wafers, achieving a PFOM of 3.07 GW/cm², the best reported internationally.

      Devices: On November 25, 2025, at APCSCRM 2025, the team presented 6-inch SBD wafers fabricated on MOCVD Gallium Oxide epitaxial layers, marking the successful integration of the materials-to-device technology chain.

      Fujia Gallium adheres to the vision of “bringing high-quality materials to the world” and is dedicated to the industrialization of ultra-wide-bandgap Gallium Oxide materials. The company was officially recognized as a National High-Tech Enterprise on December 8, 2023, and successfully passed ISO 9001 Quality Management System certification on April 1, 2025. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and VB- and EFG-based crystal growth equipment, providing downstream research and industrial users with integrated material and process solutions, and promoting the application of Gallium Oxide in power electronics, microwave RF, and optoelectronic detection.