【Epitaxy Papers】Direct Si doping into Ga₂O₃ films from quartz substrate by low temperature heat treatment

      Researchers from the Xi'an University of Posts & Telecommunications have published a dissertation titled "Direct Si doping into Ga₂O₃ films from quartz substrate by low temperature heat treatment" in Ceramics International.

Abstract

      β-Ga₂O₃ films were prepared on quartz substrates by electron beam evaporation method, and the annealing effects on structural and electrical properties of the films were investigated. The as-depo and annealed β-Ga₂O₃ films were polycrystalline, especially, the film annealed at 500 °C exhibited excellent carrier density of 6.55727 × 10¹⁸ cm⁻³ and carrier mobility of 32.08672 cm²/Vs. The good conductive properties of the films was attributed to the direct diffusion of Si into the film from the substrate. Except for the annealing temperature, the surface morphology of the films, especially the crack density, is also a key factor affecting the conductivity of the films.

DOI：

https://doi.org/10.1016/j.ceramint.2026.01.162