Recently, the fourth-generation semiconductor team at Shenzhen Pinghu Laboratory has achieved significant progress in gallium oxide photoconductive switch devices, successfully developing a vertical-structure photoconductive switch with kilovolt-level voltage withstand capability. In close collaboration with the research team led by Professor Xiao Longfei from Shandong University, the device was systematically analyzed and demonstrated a comprehensive set of outstanding performance metrics, including a dynamic on-resistance below 10 ohms and a voltage conversion efficiency exceeding 80%. Meanwhile, its turn-on response time has reached the sub-nanosecond regime (<1 ns), marking a notable advance for China in the field of high-performance optically controlled power semiconductor devices.
Photoconductive switches are key core components in pulse power technology and high-voltage, high-speed control systems. Owing to advantages such as optical–electrical isolation, fast response, and strong immunity to electromagnetic interference, they play an irreplaceable role in advanced energy equipment, specialized electronic systems, and frontier scientific research. As a new-generation ultra-wide bandgap semiconductor material, gallium oxide features an exceptionally high theoretical breakdown electric field and favorable photosensitive characteristics, making it an ideal material for next-generation photoconductive switches with high voltage tolerance, high efficiency, and fast response.
The successful development of this high-performance gallium oxide photoconductive switch provides China with a promising new device solution for applications such as intelligent control of high-voltage DC power transmission, high-power pulse generation, advanced accelerator systems, and high-end national defense technologies.
