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【Member News】Annual Output of 10,000 Wafers Achieved! 6/8-Inch Gallium Oxide Production Line Successfully Completes Environmental Compliance Approval, The Industry Kicks Off the Year with Strong Momentum

日期:2026-02-24阅读:217

      At the beginning of 2026, Hangzhou Fujia Gallium Technology Co., Ltd. has achieved a major milestone. The company’s “Annual Production Capacity of 10,000 Large-Size, High-Quality Gallium Oxide Single-Crystal Substrates Project” officially completed final environmental protection acceptance in January 2026.

      This approval confirms that Fujia Gallium’s 6-inch and 8-inch production lines are fully compliant and authorized for large-scale manufacturing, marking a significant acceleration of Gallium Oxide industrialization in China.

      From the successful development of 6-inch Gallium Oxide crystals, to the world’s first release of 8-inch VB-grown Gallium Oxide crystals, and now to the establishment of a 10,000-wafer-scale production line, Fujia Gallium continues to transform its technological leadership into scalable market capability.

      In the year ahead, leveraging strong technical expertise and secured production capacity, the company will accelerate global commercialization of its 6-inch and 8-inch Gallium Oxide products, delivering cost-effective and high-performance Gallium Oxide solutions to customers worldwide.

 

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

 

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.