【Others Papers】Optical Absorption and Emission in Nitrogen-Implanted Ga₂O₃ Controlled by Dynamic Defect Annealing

      Researchers from the University of Oslo have published a dissertation titled "Optical Absorption and Emission in Nitrogen-Implanted Ga₂O₃ Controlled by Dynamic Defect Annealing" in Advanced Optical Materials.

Abstract

      A systematic investigation of the optical emission and absorption properties in nitrogen-implanted Ga₂O₃ in correlation with its polymorphic stability controlled by dynamic defect annealing is undertaken. It is demonstrated that dynamic annealing processes, determined by the irradiation temperatures, significantly influence both disorder accumulation and phase transformations in β-Ga₂O₃, in turn, leading to a modulation of the absorption and emission properties of the implanted material. Specifically, room-temperature implantation induces β-to-γ phase transitions, accompanied by an enhancement of the characteristic green luminescence (GL) band. In contrast, implantation at elevated temperatures suppresses γ-phase formation and promotes the emergence of strong red luminescence (RL) emission. The results are interpreted within the framework of competing effects between defects generated during the β-to-γ phase transformation and the incorporation of implanted nitrogen atoms. The presented findings contribute to a deeper understanding of dopant-defect interactions in Ga₂O₃ as well as modulation of the optical properties of its polymorphs.

DOI：

https://doi.org/10.1002/adom.202503595