Specialist Intro
【Specialist Intro】Feng Qian——the Member of Technical Expert Committee
日期：2023-03-14阅读：159
Profile
Feng Qian, is currently a professor and doctoral supervisor of the School of Microelectronics, Xi'an University of Electronic Science and Technology. She has been engaged in the research of wide band gap/ultra-wide band gap semiconductor materials and devices for a long time. At present, her main research is focused on the theoretical simulation of ultra-wide band gap semiconductor gallium oxide materials, epitaxial growth and the research of solar-blind ultraviolet detectors, high-voltage switching Schottky diodes and MOSFET devices. More than 50 of her papers were published in famous international journals and conferences such as IEEE Electron, Device Letter, IEEE Trans, Electron Devices, Applied Physics Letters. She has applied for/ authorized more than 40 patents, among which are three provincial and ministerial awards, and one second prize of the the State Technological Innovation Award. She has undertaken and participated in a number of national-level and ministerial-level projects, such as the general projects of the National Natural Science Foundation, the key projects of the National Natural Science Foundation, the major national science and technology projects, and the national key research and development plan.
Achievements
Professor Feng Qian has been engaged in the research of wide band gap semiconductor materials and devices for more than 20 years. Her academic expertise is mainly focused on the applied basic research on wide band gap semiconductor materials such as the epitaxial growth and characterization, device design and preparation. In the research of ultra-wide band gap Ga2O3 devices, the research team adopted the inclined structure combined with the in-situ F plasma treatment technology to greatly improve the breakdown voltage of the vertical Ga2O3 Schottky diode, while the forward conduction resistance is only 2.5mW×cm2 (IEEE Electron Device Letters, 414412020). In addition, by inserting a layer of 20 nm TiO2 into the Schottky metal contact and Ga2O3 drift layer, the reverse leakage characteristics of Schottky diodes have been greatly improved, while the forward conduction characteristics are almost unaffected (IEEE Transactions on Electric Device, 675628200). Ga2O3 enhanced MOSFET devices are realized based on the high-k composite gate dielectric structure, and the breakdown voltage exceeds 2000V (Applied Physics Letters, 116243503, 2020, IEEE Electron Device Letters, 413332020).
Message from the expert
Gallium oxide is a new semiconductor material with more excellent properties, which is more suitable for the development of high-voltage switches and high-voltage power devices. It is widely used in high-voltage inverter, power transmission and other fields. Therefore, the team will be committed to growing epitaxial materials with better quality and uniformity, making them suitable for the development of high-voltage devices, and carrying out device structure design and preparation, so as to maximize the advantages of gallium oxide materials.
