【Member News】Fujia Gallium Participates in the Second Fourth-Generation Semiconductor Technology Symposium; Second Gallium Oxide Technology & Industry Symposium Scheduled in Fuyang, Hangzhou

      Second Gallium Oxide Industry & Technology Symposium Scheduled in Fuyang, Hangzhou

      Focusing on core topics such as “Performance Enhancement,” “Cost Reduction and Efficiency Improvement,” and “Unlocking New Application Markets,” the event will gather experts, scholars, and industry representatives from the domestic and international gallium oxide (Ga₂O₃) community to explore cutting-edge technologies, share industry experience, and jointly plan future development.

      From March 18–19, 2026, the Second Fourth-Generation Semiconductor Technology Symposium was held at the Tai Xu Lake Holiday Hotel in Hangzhou. Hangzhou Fujia Gallium Technology Co., Ltd. (“Fujia Gallium”) was invited to participate. Dr. Duanyang Chen, the company’s Chief Scientist, delivered a keynote report titled “Bridging Gallium Oxide Research to Industry: From ‘Existence’ to ‘Utility’” and, during the closing ceremony, introduced preparations for the upcoming Second Gallium Oxide Technology & Industry Symposium in Fuyang, Hangzhou. At the conference, Fujia Gallium also showcased its independently developed gallium oxide single-crystal growth equipment, single-crystal substrates, epitaxial wafers, and SBD wafers, drawing wide attention from industry participants.

Dr. Duanyang Chen Provides In-Depth Insights into Gallium Oxide Technology Breakthroughs

      During the symposium, Dr. Chen presented Fujia Gallium’s significant progress in translating gallium oxide single-crystal substrates and epitaxial wafers from fundamental research to industrial applications, highlighting high-precision simulation and intelligent crystal growth technologies. His report also detailed the development of 8-inch gallium oxide epitaxial wafers and validation of gallium oxide SBD devices. He emphasized that gallium oxide, as the fourth-generation semiconductor following SiC and GaN, is gradually moving from “existence” to “utility,” with its immense potential in power electronics, RF devices, and other fields accelerating rapidly.

Debut of 8-Inch Gallium Oxide Epitaxial Wafers Accelerates Industrial Application

      Leveraging the conference platform, Fujia Gallium showcased its latest 8-inch gallium oxide epitaxial wafers. Previously, at the APCSCRM 2025 International Conference held November 25–27, 2025, the company unveiled 6-inch vertical Ga₂O₃ SBD wafers; on December 28, 2025, it demonstrated the world’s first 8-inch gallium oxide single crystal produced via the VB method. The debut of these 8-inch epitaxial wafers is expected to accelerate the development of gallium oxide materials toward larger sizes, lower costs, and higher performance, laying a solid foundation for the industrial application of future high-power semiconductor devices.

Second Gallium Oxide Industry & Technology Symposium Scheduled in Fuyang, Hangzhou, Outlines Industry Development Blueprint

      During the conference, Dr. Chen officially announced that the Second Gallium Oxide Industry & Technology Symposium is scheduled for October 2026 in Fuyang, Hangzhou, and introduced the preparations. The event aims to continue the mission of the first symposium—promoting nationwide academic and technological exchange and industrial development in gallium oxide—and, in line with current industry trends, will focus on key topics such as “Collaborative Innovation for Performance Enhancement,” “Core Strength for Cost Reduction and Efficiency Improvement,” and “Gallium Oxide Era: Unlocking New Application Markets.” The symposium will bring together domestic and international experts, scholars, and industry representatives to explore technological frontiers, share industrial experiences, and plan for joint development.

      Fujia Gallium will continue to uphold its corporate vision of “Making High-Quality Materials Accessible Worldwide”, centering on technological innovation and supported by full-industry-chain collaboration, to drive the rapid development of the gallium oxide industry and contribute China’s strength to the global semiconductor sector.

Product Portfolio

Gallium Oxide Crystal Growth Equipment

      Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 6-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available.

      The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment. It was the first in China to overcome the technical bottleneck of 6-inch single-crystal growth using the VB method, enabling large-diameter bulk crystal production. This platform is supported by 6 granted domestic patents and 4 international patents, with customizable equipment and process solutions available.

Gallium Oxide Single-Crystal Substrates

      As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers.

      The product portfolio includes 26 standard substrate specifications ranging from 2-inch to 6-inch diameters. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.

Gallium Oxide Epitaxial Wafers

      Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures.

      The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to the vision of “enabling the world with better materials” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV-1, CCTV-2, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper.

      In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “New Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.