【Specialist Intro】Wei Tongbo——the Member of Technical Expert Committee

Profile

  Wei Tongbo is researcher of the Institute of Semiconductor, Chinese Academy of Sciences, doctoral supervisor, chief of national Key Research and Development Program. He received PhD from the Institute of Semiconductor, Chinese Academy of Sciences in 2007, and has worked in the Lighting R&D Center of the Institute since then. From 2015 to 2016, he visited and studied in the School of Electronic Engineering and Computer Science, Cornell University. He has long been engaged in the epitaxy and device research of optoelectronic materials of wide band gap semiconductor nitride, including large mismatch system heteroepitaxy, new micro/nano photoelectric devices, deep ultraviolet luminescence and detection, etc. As a first or corresponding author, he has published more than 90 SCI papers related to nitride in Adv Mater.、J. Am. Chem. Soc.、Light Sci. Appl. and other journals, cited more than 3000 times, authorized more than 30 patents. He published one monograph, and participated in editing two books. Currently, he serves as the editorial board member of the Journal of Semiconductors and the youth editorial board member of the Luminous Journal.

Achievements

  Researcher Wei Tongbo has been engaged in the research of wide band band semiconductor optoelectronic materials and devices for more than ten years, mainly focusing on GaN substrate growth, thin film material epitaxy, LED and detector device process and related device physics research. His main research focuses on the preparation of non-polar GaN substrate, the regulation and design of blue light LED quantum structure, efficiency improvement of deep ultraviolet LED, and two-dimensional van der Waals epitaxial nitride devices. And his achievements have been reported 16 times by international famous semiconductor journals Compound Semiconductor and Semiconductor Today as research highlights. Based on the gallium oxide single crystal substrate, he conducted the studies on GaN and AlGaN heteroepitaxy, and prepared the vertical structure LED device（CrystEngComm，2020, 22, 3122, Opt. Lett. 2022, 47, 3299）. He explored the rectification properties of the heterogeneous interface of Ga₂O₃ and GaN（J. Appl. Phys. 2020, 127, 015302）. Combined with GaN thermal oxidation, he also prepared a Ga₂O₃ UV detector with high-performance dual-wavelength response（Opt. Lett. 2019, 44, 2197）.

Message from the expert:

  β-Ga₂O₃, whose lattice mismatch with GaN is only 1.9%, has a high band width (4.8 eV), and n-type concentration of 10¹⁹ cm^-3 can be achieved by doping. With good conductivity, β-Ga₂O₃ an ideal substrate material for deep ultraviolet LED. If high-quality AlGaN film epitaxy can be realized without complex processes such as stripping and transfer, high-power vertical structure deep UV LED devices can be realized, which is of great value for improving the performance of deep UV LED. Therefore, once the technological breakthrough achieves by adopting the deep ultraviolet LED technology with β-Ga₂O₃ substrate, it will greatly promote the development of the entire deep ultraviolet LED industry. In the future, our team will be working on the growth and device preparation of deep ultraviolet LED materials on β-Ga₂O₃, and explore the scientific issues related to heteroepitaxy.