【Member News】Shandong Liguan Achieves Major Breakthrough in 8-Inch Gallium Oxide HVPE Epitaxy Equipment

日期：2026-04-10阅读：168

In April 2026, Shandong Liguan Microelectronics Equipment Co., Ltd. achieved a significant technical breakthrough in the field of gallium oxide (Ga₂O₃) HVPE epitaxy equipment.

In this breakthrough, the company’s professional doctoral process technology team successfully verified the film thickness uniformity and surface morphology uniformity of gallium oxide HVPE epitaxial growth using 8-inch sapphire substrates.

Test results show:

●Film thickness exceeds 20 μm

●Film thickness uniformity (based on maximum deviation) is better than 20%, with the best batch uniformity reaching within 5% – comparable to the epitaxial level of 4-inch HVPE equipment

●Growth rate is stable at 10–20 μm/h

●Heteroepitaxial morphology uniformity on sapphire substrates is well demonstrated

These data fully indicate that the 8-inch HVPE epitaxial growth process offers excellent controllability and consistency.

Why is this breakthrough noteworthy?

In gallium oxide power devices, the epitaxial layer serves as the drift region and is critical for withstanding high voltage. Its thickness is positively correlated with the device’s breakdown voltage. For example, 10,000V-class devices typically require an epitaxial layer thickness of several tens of micrometers. Conventional MOCVD epitaxy, with a growth rate of only 1–2 μm/h, is significantly inefficient for such requirements. HVPE epitaxy, by contrast, offers an ideal and advantageous alternative.

Shandong Liguan achievement – high uniformity and consistency at the 8-inch scale – lays a solid technical foundation for advancing gallium oxide power devices toward larger dimensions and higher voltage classes.

Shandong Liguan remains dedicated to the R&D and manufacturing of high-end semiconductor equipment, delivering excellence through professional craftsmanship and creating lasting value for customers with dedication.