【Specialist Intro】Lu Xiaoli —— the Member of Technical Expert Committee

Profile

  Lu Xiaoli, male, PhD, professor and doctoral supervisor at Xi'an University of Electronic Science and Technology, German "Humboldt Scholar" (2009-2011), winner of the first Excellent Doctoral Dissertation in Anhui Province; He serves as an evaluation expert of the Degree Center of the Ministry of Education, and National Natural Science Foundation of China, guest editor of the International Journal Frontiers in Physics, and young editorial board member of InfoMat. and a reviewer of Advanced Materials, ACS Nano, IEEE Electron device Letters and other journals. He mainly studies the epitaxial growth of ultra wide band gap Ga₂O₃ and the reliability of related devices, based on the National Engineering Research Center. He led two projects of “the National Natural Science Foundation of China", one "Youth Project of the National Natural Science Foundation of China", one "XX Technical Field Project", and one "XX Key Project Sub Project". As a technical backbone, he participated in research projects such as the "Key Projects of the National Natural Science Foundation of China" and the "Key R&D Plan of the Ministry of Science and Technology".

Achievements

  Professor Lu Xiaoli has been engaged in research in the field of microelectronic devices for over ten years, with academic expertise mainly including fundamental research on wide bandgap semiconductor materials, process technology, and advanced devices. He investigated the ability of different elastic stresses as well as stress gradients to regulate the β-Ga₂O₃ band gap size.

  He explored the rules and principles of stress regulation by using first principles simulation and XPS and Raman. He found that as the elastic stress increased, the band width of β-Ga₂O₃ was decreased by up to 30%, which is observed for the first time in the world that elastic stress regulates β-Ga₂O₃ band width. This method provides a new approach to achieving the efficient P-type doping of β-Ga₂O₃. (Materials Today Physics 2022, 25100697) He found that neutron irradiation can regulate the carrier concentration of Fe-doped β-Ga₂O₃ film, making β-Ga₂O₃ controllable in the ultra-low carrier concentration range （1×10¹²cm^-3-1×10¹⁵ cm^-3）. He proposed a two-step surface treatment process, which successfully realized the growth of β-Ga₂O₃ epitaxial film with high crystallization quality and high doping activation efficiency on a homogeneous substrate by adjusting the surface treatment, growth oxygen pressure and substrate temperature. For the first time, he prepared a semi-insulating Fe-doped β-Ga₂O₃ epitaxial film with atomic step morphology, whose carrier concentration was as low as 4.39×10⁷ cm^-3 at concentration. Meanwhile, the carrier concentration of the Sn-doped β-Ga₂O₃ epitaxial layer was 2.01×10²⁰ cm^-3 and the doping activation rate was 41.1%, which broke the bottleneck of low doping activation rate of β-Ga₂O₃ epitaxial film at high doping concentration.（Journal of Alloys and Compounds, 2021, 855, 157296）

Message from the expert

  In the past decade, β-Ga₂O₃ materials and devices have become a hot topic of academic attention. because β-Ga₂O₃ has a high-quality and low-cost wafer with great breakdown electric field and a large size, which has broad prospects in power electronics and solar blind detectors. The rapid development of device applications has made the demand increasingly urgent for epitaxial thin films with controllable doping and high crystal quality. However, there are still many difficulties in the preparation of Ga₂O₃ materials and research of related properties, especially the low crystallization quality of large size epitaxial thin films and doping difficulties, which limit their research and application in semiconductor devices. In addition, it still need to solve the lack of high concentration p-type doping in Ga₂O₃ and the low doping activation rate.