【Device Papers】Electric field redistribution of multiple floating field plates in vertical β-Ga₂O₃ Schottky diodes

      Researchers from the Xidian University have published a dissertation titled "Electric field redistribution of multiple floating field plates in vertical β-Ga₂O₃ Schottky diodes" in Microelectronics Journal.

Abstract

      Beta Gallium oxide (β-Ga₂O₃) is regarded as a key enabler for the next generation of high-power electronics targeting high-temperature and high-voltage operations. In this work, a high-performance vertical β-Ga₂O₃ Schottky Barrier Diode (SBD) with a multiple floating field plate (MFFP) termination structure based on Al₂O₃ dielectric were investigated. The MFFP structure effectively modulates the electric field distribution via capacitive coupling effect enhances reverse blocking capability, improves the breakdown voltage from 750 V to 1820 V, achieving a high Baliga's power figure-of-merit (PFOM) of 0.78 GW/cm². The TCAD simulations reveal the electric field modulation mechanism, demonstrating that the optimized structural parameters and dielectric thickness effectively suppress the peak electric field at the anode edge. These results underscore the potential of integrating MFFP structures with Al₂O₃ dielectrics as a robust edge termination strategy for next generation high voltage β-Ga₂O₃ power electronics.

DOI：

https://doi.org/10.1016/j.mejo.2026.107194